Comparison ledger
Oxford Instruments 80-etch, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 80-etchOxford Instruments | 110Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 80-etch | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| OEM | Oxford Instruments[2] | — |
| Model | 80-etch[2] | — |
| S/N | 9M69591A[2] | — |
| Controller arrangement | One controller for both RIE and PECVD[2] | — |
| PECVD capabilities | Amorphous Si, Si3N4, SiONx, SiO2[2] | — |
| Source gases available | SiH4, N2, N2O, NH3, Ar[2] | — |
| Category | Etch[3] | — |
| Process use | Wafer or thin film etching/patterning[2] | — |
| Serial number | 9M69591A[2] | — |
| Source gases | SiH4, N2, N2O, NH3, Ar[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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