Comparison ledger
Oxford Instruments 800 Plus RIE, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 800 Plus RIEOxford Instruments | 110Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab 800 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | may have missing parts[2] | — |
| Process type | Reactive I on Etching (RIE)[3] | — |
| Wafer size | 5 inch[2] | — |
| Control system | PC controller[3] | — |
| Footprint | All electronics and vacuum components located within tool body to minimize footprint[3] | — |
| RF supply | Advanced Energy RFX 600A[3] | — |
| Tur bpump | Leybold TMP-361C[3] | — |
| Tur bpump controller | Leybold Harris Turbotronik NT20[3] | — |
| Vacuum pump | Busch Cobra BA100[3] | — |
| Elecrical supply | 208 VAC, 3 Phase[4] | — |
| Included subsystems | Process chamber, gas-delivery and control enclosure, cooling and shutter controls, pumping/control computer[4] | — |
| Type | Reactive Ion Etching (RIE) System[3] | — |
| Controller | PC controller[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[1] |
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