Comparison ledger
Oxford Instruments OpAL and Oxford Instruments PECVD4, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | OpALOxford Instruments | PECVD4Oxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments OpAL | Oxford Instruments PECVD4 |
| Cited variants | — | |
| Specifications | ||
| Configuration | Single open loop chamber (non-loadlocked)[2] | — |
| Heated table | 80-300ºC[2] | — |
| Voltage | 208V, 3Ph, 60Hz, 25A[2] | — |
| OEM | — | Oxford Instruments[1] |
| Model | — | PECVD4[1] |
| Full equipment name | — | Oxford Plasmalab System 100 PECVD System[1] |
| Process reference | — | PECVD SiOx Deposition with 81MHz Power[1] |
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