Oxford Instruments

OpAL

Q: What temperature range is specified for the heated table?

The heated table is specified at 80-300ºC.

Deposition Oxford Instruments OpAL family

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Oxford Instruments OpAL is an atomic layer deposition system. Oxford Instruments OpAL uses a single open-loop chamber that is non-loadlocked. Oxford Instruments OpAL includes a downstream 300 W RF plasma head with an isolation valve.^[1]^[2]^[3]

OpAL — Inventory photo — Fig. 01OpALInventory photo^[3]

What it is

Oxford Instruments OpAL is an atomic layer deposition system.^[2]^[1]^[3]

Oxford Instruments OpAL is configured as a single open-loop chamber system with a heated table and a downstream RF plasma head.^[2]^[3]

How it works

Oxford Instruments OpAL uses dose and purge loops for process control, and the system includes a downstream 300 W RF plasma head with an isolation valve.^[2]^[3]

Where it fits in the process flow

General reference — not yet source-verified

Atomic layer deposition is a thin-film process used after substrate preparation when conformal, controlled-thickness layers are needed.

Applications

Oxford Instruments OpAL is used for deposition of ultrathin layers.^[1]

Oxford Instruments OpAL is used for deposition of metal oxides, nitrides, and metals.^[1]

Why won't it start?

Documented failure modes, common issues, and field considerations.

The system is described as an open-load configuration without a loadlock.
One source notes that not all materials and processes are continuously available.

What do the numbers mean?

Power & electrical4

Downstream 300 W RF plasma head with isolation valve^[3]
Voltage: 208V, 3Ph, 60Hz, 25A^[3]
Plasma head: downstream 300 W RF plasma head with isolation valve^[3]
Plasma integration: optional in-situ RF (13.56 MHz) or microwave (2.45 GHz) source, field-upgradeable^[4]

Wafer handling5

Single open loop chamber (non-loadlocked)^[3]
Chamber: single open load chamber (non-loadlocked)^[2]
Sample size compatibility: up to 200 mm wafers^[2]
Maximum substrate diameter: 200 mm^[1]
Uniformity: <±1.5% across 200 mm Si wafers^[4]

Gas & chemistry4

Two channels for metal organic precursors: 1 for water and a plasma head^[3]
Precursors: three precursors-inputs plus a separate H2O precursor input^[1]
Gas channels: two channels for metal organic precursors: 1 for water and a plasma head^[3]
Precursor channels: 4 independent, pneumatically actuated dose lines with heated delivery paths^[4]

Control & software2

Software to run loops of dose/purge cycles^[3]
Control software: software to run loops of dose/purge cycles^[3]

Dimensions & facilities2

System footprint: approx. 1200 × 1800 × 800 mm^[4]
Mass: ~450 kg^[4]

Configuration & options7

Heated table: 80-300ºC^[3]; Heated sidewalls 8.25"^[3]
Type: atomic layer deposition (ALD) reactor^[1]
Operation: plasma assisted and thermal^[1]
Heated table temperature: 80-300ºC^[3]
Heated sidewalls: 8.25"^[3]
Process temperature range: ambient to 400 °C (typical for thermal ALD)^[4]

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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

ConfigurationTwo channels for metal organic precursors: 1 for water and a plasma head^[3]
ConfigurationDownstream 300 W RF plasma head with isolation valve^[3]
Voltage208V, 3Ph, 60Hz, 25A^[3]
Precursorsthree precursors-inputs plus a separate H2O precursor input^[1]
Gas channelstwo channels for metal organic precursors: 1 for water and a plasma head^[3]
Plasma headdownstream 300 W RF plasma head with isolation valve^[3]
Precursor channels4 independent, pneumatically actuated dose lines with heated delivery paths^[4]
Plasma integrationoptional in-situ RF (13.56 MHz) or microwave (2.45 GHz) source, field-upgradeable^[4]

Where are the manuals?

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Not publicly documented

Field notes

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Frequently asked questions

What type of deposition system is Oxford Instruments OpAL?

Oxford Instruments OpAL is an atomic layer deposition system.^[2]^[1]

Does Oxford Instruments OpAL use plasma?

Oxford Instruments OpAL includes a downstream 300 W RF plasma head with an isolation valve.^[2]^[3]

What temperature range is specified for the heated table?

The heated table is specified at 80-300ºC.^[2]^[3]

How is the chamber configured?

Oxford Instruments OpAL uses a single open-loop chamber that is non-loadlocked.^[2]^[3]

Not publicly documented

The following facts about the OpAL are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the OpAL are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the OpAL are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the OpAL are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the OpAL is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the OpAL are on record.
Answerable by: an OEM parts catalog or a service engineer