Comparison ledger
Oxford Instruments Plasmalab 100 ICP-RIE, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab 100 ICP-RIEOxford Instruments | 110Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab 100 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Process gases used | H2, O2, N2, Ar, CF4, SF6, CHF3, He, CH4, HBr, Cl2 and BCl3[2] | — |
| Cryo Table w/ operating temp | -150 to 400C[2] | — |
| Substrate cooling | using liquid nitrogen (LN2)[2] | — |
| Configuration | RF source 300 W, 13.56 MHz[2] | — |
| Base pressure | 5E-7 Torr[2] | — |
| Main Chamber Backing Pump | Adixen ADP 122P Dry pump[2] | — |
| Main Chamber Turbo Pump | Adixen ATH 1300 Turbo[2] | — |
| Load Lock | Adixen ACP 15G Dry pump[2] | — |
| Wafer Sizes | 8 inch[2] | — |
| Cryo Table operating temperature | -150 to 400C[2] | — |
| RF source | 300 W, 13.56 MHz[2] | — |
| ICP source | 3000 W, 13.56 MHz[2] | — |
| Endpoint detector | Horiba Laser Endpoint Detector[2] | — |
| Load locked | Yes[2] | — |
| Load lock pump | Adixen ACP 15G Dry pump[2] | — |
| Model designation | Plasmalab System 100 ICP-RIE 180[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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