Comparison ledger
Oxford Instruments Plasmalab 80 Plus RIE-PECVD, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab 80 Plus RIE-PECVDOxford Instruments | 110Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab 80 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Dual Chamber (Chamber A | PECVD & Chamber B: RIE)[2] | — |
| Configuration | It has some problems. It was setup with PC interface and it appears to have lost signals for RF power, pressure and chamber switch was erratic.[2] | — |
| Power Supply Upgrade | ENI Power Supply upgraded to MKS[2] | — |
| OEM | Oxford Instruments[2] | — |
| Model | Plasmalab 80 Plus RIE-PECVD[2] | — |
| System type | Reactive Ion Etcher - Plasma-Enhanced Chemical Vapor Deposition[2] | plasma etch system[3] |
| Chamber A | PECVD[2] | — |
| Chamber B | RIE[2] | — |
| Control interface | PC interface[2] | — |
| Reported issues | Lost signals for RF power and pressure; chamber switch was erratic[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[3] |
| Physical description | — | compact[1] |
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