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Comparison ledger

Plasmalab 800 Plus RIEversus110

Oxford Instruments Plasmalab 800 Plus RIE, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
Plasmalab 800 Plus RIEOxford Instruments
110Tegal
OEMOxford InstrumentsTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments Plasmalab 800Tegal 110
Cited variants—
Specifications
ConfigurationLEP Tungsten[2]—
TypeReactive Ion Etching (RIE) System[3]—
ControllerPC controller[4]—
Footprint designAll electronics and vacuum components located within the tool body to minimize footprint[4]—
OEMOxford Instruments[2]—
ModelPlasmalab 800 Plus RIE[2]—
Equipment typeReactive Ion Etcher[2]—
CategoryRIE[3]—
PC controllerProvides intuitive user interaction with the system via advanced graphics and process recipe pages[4]—
MFC gas controllersFour MFC gas controllers[4]—
GasesO2, CF4, Ar, CHF3[4]—
Electrode diameter460 mm[4]—
Top electrode diameter18.75 in.[4]—
Top electrode gas deliveryShower head gas delivery[4]—
Vacuum systemTurbo pump and dry pump[4]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[5]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[5]
Physical description—compact[1]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]semistarcorp.comsemistarcorp.com
  4. [4]semistarcorp.comsemistarcorp.com
  5. [5]waferpedia.comwaferpedia.com