Comparison ledger
Oxford Instruments PlasmaPro 100 Cobra ICP-RIE, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PlasmaPro 100 Cobra ICP-RIEOxford Instruments | 110Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro 100 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Voltage | 208 V, 3 Phase, 50/60 Hz[2] | — |
| Configuration | Configured for 6" substrates[2] | — |
| Wafer size support (200 mm platform) | 200 mm (8 in) platform; compatible with all wafer sizes up to 200 mm[3] | — |
| Wafer size (configured system) | 6 inch substrates[2] | — |
| Substrate temperature range | -150°C to +400°C[3] | — |
| ICP source sizes | 65 mm, 180 mm, 300 mm[3] | — |
| Etch chemistries | SF6, CHF3, CF4, O2[4] | — |
| Electrical requirements | 208 V, 3 phase, 50/60 Hz[2] | — |
| Included components (example configuration) | Advanced Energy paramount MF 5003 RF Generator; Pfeiffer Adixen Magpower Turbopump Controller; Pfeiffer Adixen A 124 H Vacuum Pump; Pfeiffer Adixen ZCP 15 G Vacuum Pump; Gas Box; Control Computer & LCD Monitor with OS PTIQ Version 2021.12.2.0[2] | — |
| Upgrades/accessories available | Dry pump N2 standby, gas pod, Logviewer software, optical end point detectors, soft pump, turbomolecular vacuum pump, X20 Control System, Advanced Energy Paramount generator, automatic pressure control, dual CM gauge switching, LN2 autochangeover, TEOS liquid level sensing[3] | — |
| OEM | Oxford Instruments[2] | — |
| Model | PlasmaPro 100 Cobra ICP-RIE[2] | — |
| Process type | Inductively Coupled Plasma - Reactive Ion Etch[2] | — |
| Configured substrate size | 6" substrates[2] | — |
| Wafer size platform | 200mm platform[3] | — |
| Maximum wafer size | up to 200mm[3] | — |
| Plasma source | high-density inductively coupled plasma[5] | — |
| Etch performance | fast etch rates[5] | — |
| Process characteristics | excellent uniformity, high-throughput, high-precision and low-damage processes[5] | — |
| Wafer size capability | up to 200mm[3] | — |
| Etch process | ICP reactive ion etching on silicon based materials[4] | — |
| Materials | SiO2, Si3N4, and isotropic Si etching[4] | — |
| Performance characteristics | excellent uniformity, high-throughput, high-precision, and low-damage processes[5] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[6] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[6] |
| Physical description | — | compact[1] |
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