Comparison ledger
Oxford Instruments PlasmaPro100 and STS Multiplex ICP, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | PlasmaPro100Oxford Instruments | |
|---|---|---|
| OEM | Oxford Instruments | STS |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | DOS |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro100 | STS Multiplex ICP |
| Specifications | ||
| OEM | Oxford[2] | — |
| Model | PlasmaPro100[2] | — |
| Equipment type | dry etcher[2] | — |
| Plasma source | ICP plasma etcher[2] | — |
| Wafer size | 100mm wafers[2] | 100 mm wafers[1] |
| Chemistry | chlorine and bromine chemistry[2] | — |
| Clamping | electrostatic clamping[2] | Clamped[1] |
| Compatibility | microelectronic compatible equipment[2] | — |
| Applications | metals etching; deep polymer etching; Si, SiO2 and Si3N4 thin films etching[2] | — |
| Endpoint detection | laser reflectometry/interferometry and optical emission spectroscopy (EOS) endpoint detection[2] | — |
| Tool type | — | load-locked, inductively coupled plasma etch system[1] |
| Process | — | deep silicon etching using the Bosch process[1] |
| Process gases | — | SF6, C4F8, O2, Ar[1] |
| Carrier requirement | — | Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier[1] |
| Platen size | — | 100 mm[1] |
| ICP power range | — | 0–900 Watts[1] |
| Bias power range | — | 0–30 Watts[1] |
| MFC flow range - SF6 | — | 0–300 sccm[1] |
| MFC flow range - C4F8 | — | 0–200 sccm[1] |
| MFC flow range - O2 | — | 0–100 sccm[1] |
| MFC flow range - Ar | — | 0–100 sccm[1] |
| Pressure range | — | < 90 mTorr[1] |
| Backside cooling | — | Helium[1] |
| Selectivity to photoresist | — | 50:1[1] |
| Selectivity to wet thermal SiO2 | — | 100:1[1] |
| Typical repeatable aspect ratio | — | 10:1[1] |
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