Waferpedia

Comparison ledger

PlasmaPro100 versus Multiplex ICP

Oxford Instruments PlasmaPro100 and STS Multiplex ICP, side by side. Every value shown is drawn from its cited encyclopedia entry.

Documented as functional equivalentsSame function class: Etch, 100mm[1]
Side-by-side comparison of selected equipment models
Attribute
PlasmaPro100Oxford Instruments
OEMOxford InstrumentsSTS
CategoryEtchEtch
Wafer size100mm100mm
Process node
Introduced
Production run
Lifecycle
Lifecycle milestones
Control systemDOS
Generation
FamilyOxford Instruments PlasmaPro100STS Multiplex ICP
Specifications
OEMOxford[2]
ModelPlasmaPro100[2]
Equipment typedry etcher[2]
Plasma sourceICP plasma etcher[2]
Wafer size100mm wafers[2]100 mm wafers[1]
Chemistrychlorine and bromine chemistry[2]
Clampingelectrostatic clamping[2]Clamped[1]
Compatibilitymicroelectronic compatible equipment[2]
Applicationsmetals etching; deep polymer etching; Si, SiO2 and Si3N4 thin films etching[2]
Endpoint detectionlaser reflectometry/interferometry and optical emission spectroscopy (EOS) endpoint detection[2]
Tool typeload-locked, inductively coupled plasma etch system[1]
Processdeep silicon etching using the Bosch process[1]
Process gasesSF6, C4F8, O2, Ar[1]
Carrier requirementWafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier[1]
Platen size100 mm[1]
ICP power range0–900 Watts[1]
Bias power range0–30 Watts[1]
MFC flow range - SF60–300 sccm[1]
MFC flow range - C4F80–200 sccm[1]
MFC flow range - O20–100 sccm[1]
MFC flow range - Ar0–100 sccm[1]
Pressure range< 90 mTorr[1]
Backside coolingHelium[1]
Selectivity to photoresist50:1[1]
Selectivity to wet thermal SiO2100:1[1]
Typical repeatable aspect ratio10:1[1]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]cores.research.asu.educores.research.asu.edu
  2. [2]epfl.chepfl.ch