Waferpedia

STS

Multiplex ICP

Etch100mmSTS Multiplex ICP family
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Multiplex ICP — cores.research.asu.edu
Fig. 01Multiplex ICPcores.research.asu.edu[2]

  • Plate 01STS Multiplex ICP Etcher #58180

    Bid ServicellcWatch on YouTube

  • Plate 02SPTS STS MULTIPLEX ICP STANDALONE SYSTEM used semiconductor equipment

    SemiStarWatch on YouTube

  • Plate 03Video 1 of 4 - STS Multiplex ICP AOE Etcher (ID# 3457) - Turn On & Pump Down

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  • Plate 04Surface Tech Sys Multiplex ICP Semiconductor Equipment

    Peter ChenWatch on YouTube

  • Plate 05Surface Tech Sys Cluster ASE AOE Multiplex ICP

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  • Plate 06STS SPTS Multiplex ICP HRM Etcher used semiconductor equipment

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  • Plate 07Video 3 of 4 - STS Multiplex ICP AOE Etcher (ID# 3457) - Leak Rates

    ClassOneEngineeringWatch on YouTube

  • Plate 08Video 4 of 4 - STS Multiplex ICP AOE Etcher (ID# 3457) - Plasma

    ClassOneEngineeringWatch on YouTube

Wafer size

100mm

Power

0–900 Watts[2]

Vacuum

< 90 mTorr[2]

Gas delivery

SF6, C4F8, O2, Ar[2]

Control era

DOS

What is it?

The source describes the STS ASE ICP DRIE as a load-locked inductively coupled plasma etch system for deep silicon etching using the Bosch process, with process gases including SF6, C4F8, O2, and Ar. It is specified for 100 mm wafers, with smaller wafers and irregular samples placed on a 100 mm carrier.

What can it run?

Process applications and technology nodes documented for this tool.

  • deep silicon etching
  • Bosch process etching

What do the numbers mean?

Power & electrical2

ICP power range
0–900 Watts[2]
Accurate?
Bias power range
0–30 Watts[2]
Accurate?

Vacuum & pumping1

Pressure range
< 90 mTorr[2]
Accurate?

Wafer handling2

Wafer size
100 mm wafers[2]3 sources
Accurate?
Carrier requirement
Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier[2]
Accurate?

Gas & chemistry6

Process gases
SF6, C4F8, O2, Ar[2]
Accurate?
MFC flow range - SF6
0–300 sccm[2]
Accurate?
MFC flow range - C4F8
0–200 sccm[2]
Accurate?
MFC flow range - O2
0–100 sccm[2]
Accurate?
MFC flow range - Ar
0–100 sccm[2]
Accurate?
Selectivity to photoresist
50:1[2]
Accurate?

Configuration & options7

Tool type
load-locked, inductively coupled plasma etch system[2]
Accurate?
Process
deep silicon etching using the Bosch process[2]
Accurate?
Platen size
100 mm[2]
Accurate?
Backside cooling
Helium[2]
Accurate?
Clamping
Clamped[2]
Accurate?
Selectivity to wet thermal SiO2
100:1[2]
Accurate?
Typical repeatable aspect ratio
10:1[2]
Accurate?

Vintage & configurations

Control-system eraDOS[1]

Interested in this tool?
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What replaced it?

Alternatives

Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Process gasesSF6, C4F8, O2, Ar[2]
  • ICP power range0–900 Watts[2]
  • Bias power range0–30 Watts[2]
  • MFC flow range - SF60–300 sccm[2]
  • MFC flow range - C4F80–200 sccm[2]
  • MFC flow range - O20–100 sccm[2]
  • MFC flow range - Ar0–100 sccm[2]
  • Pressure range< 90 mTorr[2]
  • Selectivity to photoresist50:1[2]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Not publicly documented

The following facts about the Multiplex ICP are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Multiplex ICP are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Multiplex ICP are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • No publicly documented failure modes or field errata for the Multiplex ICP are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Multiplex ICP is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the Multiplex ICP are on record.

    Answerable by: an OEM parts catalog or a service engineer

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (6)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.ch
  2. [2]cores.research.asu.edu — cores.research.asu.educores.research.asu.edu
  3. [3]wcnt.wisc.eduwcnt.wisc.edu
  4. [4]epfl.chepfl.ch
  5. [5]Etching &#8210; Center of MicroNanoTechnology CMi &#8208; EPFL — epfl.chepfl.ch
  6. [6]STS Multiplex ICP RIE - Claire & John Bertucci Nanotechnology Laboratory - College of Engineering - Carnegie Mellon Univ — nanofab.ece.cmu.edunanofab.ece.cmu.edu
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Last updated Jul 29, 2026.

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