Comparison ledger
Plasma-Therm 770 and STS Multiplex ICP, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | 770Plasma-Therm | |
|---|---|---|
| OEM | Plasma-Therm | STS |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | DOS |
| Generation | — | — |
| Family | Plasma-Therm 770 | STS Multiplex ICP |
| Specifications | ||
| Manufacturer | Plasmatherm (Unaxis)[2] | — |
| Model | Plasma-Therm 770 SLR series[2] | — |
| Tool type | Dry Etch[2] | load-locked, inductively coupled plasma etch system[1] |
| System type | Fluorine-based ICP etcher with loadlock[2] | — |
| Plasma source | Inductively Coupled Plasma (ICP) coil[2] | — |
| Substrate bias | Capacitively coupled substrate RF supply[2] | — |
| ICP coil power | 1000 W at 2 MHz[2] | — |
| Substrate bias power | 500 W at 13.56 MHz[2] | — |
| Available gases | C4F8, SF6, O2, Ar, N2, CHF3, CF4[2] | — |
| Backside cooling | Helium backside cooling[2] | Helium[1] |
| Chuck temperature | 10°C standard[2] | — |
| Wafer handling | Single 100 mm / 4-inch wafer handling with physical topside clamp contacting the outer 5 mm of the wafer[2] | — |
| Control system | Windows-based computer control of process and wafer handling[2] | — |
| Endpoint monitoring | In-situ laser monitor with camera and simulation software[2] | — |
| Number of MFC gas controllers | 8[3] | — |
| Gases (chlorine configuration) | N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[3] | — |
| Wafer size range (with appropriate kit) | 2" to 8"[3] | — |
| Gases (previous usage, chlorine configuration) | N₂, O₂, He, CHF₃, Cl₂, BCl₃[4] | — |
| Process | — | deep silicon etching using the Bosch process[1] |
| Process gases | — | SF6, C4F8, O2, Ar[1] |
| Wafer size | — | 100 mm wafers[1] |
| Carrier requirement | — | Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier[1] |
| Platen size | — | 100 mm[1] |
| ICP power range | — | 0–900 Watts[1] |
| Bias power range | — | 0–30 Watts[1] |
| MFC flow range - SF6 | — | 0–300 sccm[1] |
| MFC flow range - C4F8 | — | 0–200 sccm[1] |
| MFC flow range - O2 | — | 0–100 sccm[1] |
| MFC flow range - Ar | — | 0–100 sccm[1] |
| Pressure range | — | < 90 mTorr[1] |
| Clamping | — | Clamped[1] |
| Selectivity to photoresist | — | 50:1[1] |
| Selectivity to wet thermal SiO2 | — | 100:1[1] |
| Typical repeatable aspect ratio | — | 10:1[1] |
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