Plasma-Therm
770
Wafer size
100mm
Power
Capacitively coupled substrate RF supply[1]
Gas delivery
C4F8, SF6, O2, Ar, N2, CHF3, CF4[1]
What it is
How it works
The Plasma-Therm 770 generates plasma using an inductively coupled plasma (ICP) coil source.[1][2][3]
A capacitively coupled substrate RF supply provides independent control of ion energy and plasma density.[1]
The system uses helium back-side cooling in conjunction with computer-controlled substrate clamping to manage wafer temperature during processing.[1][2][3]
Closed-loop pressure control and a turbo pump with a roughing pump maintain the process vacuum.[2][3]
Process control and wafer handling are managed by a Windows-based computer system.[1][2]
Where it fits in the process flow
The Plasma-Therm 770 is a dry etch tool used in semiconductor and compound semiconductor fabrication.[1][2][3]
The tool can process wafers from two inches to eight inches in diameter, depending on the installed process kit.[2][3]
The Plasma-Therm 770 is configured for fluorine-based etching and for chlorine-based etching of metals and compound semiconductors.[1][3]
Applications
The fluorine-configured version of the Plasma-Therm 770 is used for etching materials such as silicon dioxide, silicon nitride, and silicon, as well as other materials that form volatile fluoride etch products.[1]
The fluorine system is used for Bosch MEMS processes.[1]
The chlorine-configured version is used for deep etching of gallium arsenide and other compound semiconductors.[3]
- Fluorine-containing etch processes
- SiO2 etching
- Si etching
- Etching materials like SiO2, Si3N4, silicon, and other materials with volatile fluoride etch products
- Bosch MEMS processes
Why won't it start?
Documented failure modes, common issues, and field considerations.
- The outer 5 mm of the wafer or carrier wafer must be kept free of photoresist or oil because the ceramic clamp contacts that region.
What do the numbers mean?
Power & electrical3
Wafer handling6
Gas & chemistry5
Optics & imaging2
Configuration & options5
What replaced it?
Alternatives
Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.
- STS Multiplex ICP— Same function class: Etch, 100mmCompare in depthsource[4]
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Substrate biasCapacitively coupled substrate RF supply[1]
- ICP coil power1000 W at 2 MHz[1]
- Substrate bias power500 W at 13.56 MHz[1]
- Available gasesC4F8, SF6, O2, Ar, N2, CHF3, CF4[1]
- Available gasesC₄F₈, SF₆, O₂, Ar, N₂, CHF₃, CF₄[1]
- Number of MFC gas controllers8[2]
- Gases (chlorine configuration)N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[2]
- Gases (previous usage, chlorine configuration)N₂, O₂, He, CHF₃, Cl₂, BCl₃[3]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What source powers the plasma in the Plasma-Therm 770?
The plasma is generated by a high-frequency RF-based inductively coupled plasma (ICP) source.[2][3]
Does the Plasma-Therm 770 use a load lock?
Yes, the system includes a vacuum load lock with a wafer transfer robot.[2][3]
What wafer sizes can the Plasma-Therm 770 handle?
The tool can process wafers from two inches to eight inches in diameter, depending on the installed process kit.[2][3]
How is the wafer cooled during etching on the Plasma-Therm 770?
Helium back-side cooling is used in conjunction with computer-controlled substrate clamping to manage wafer temperature.[2][3]
What types of chemistries were used with the chlorine-configured Plasma-Therm 770?
The chlorine-configured version previously used nitrogen, oxygen, helium, CHF₃, Cl₂, and BCl₃ gases.[3]
Not publicly documented
The following facts about the 770 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 770 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 770 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 770 are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the 770 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the 770 are on record.
Answerable by: an OEM parts catalog or a service engineer
Sources & citations
Sources (4)Every fact above is drawn from these public sources
- [1]wiki.nanotech.ucsb.edu — wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu
- [2]nanolab.ucla.edu — nanolab.ucla.edunanolab.ucla.edu
- [3]wotol.com — wotol.comwotol.com
- [4]cores.research.asu.educores.research.asu.edu
Last updated Aug 13, 2026.
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