Comparison ledger
Plasma-Therm Unaxis 790, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Unaxis 790Plasma-Therm | 110Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm Unaxis 790 | Tegal 110 |
| Cited variants |
| |
| Specifications | ||
| Phase | 3 Phase[6] | — |
| Configuration | 5 Wire[6] | — |
| Voltage | 208 Vac[6] | — |
| Tool type | Reactive ion etcher (RIE)[1] | — |
| Process | General purpose parallel plate plasma etching system[1] | — |
| RF power source | Up to 500 W at 13.56 MHz[1] | — |
| Electrode temperature range | 0 °C to 70 °C[1] | — |
| Process gases | Ar, O2, CF4, CHF3, SF6[1] | — |
| Maximum wafer diameter | 200 mm (8 in)[1] | — |
| Small pieces supported | Yes[1] | — |
| Electrical configuration | 3 phase, 5 wire, 208 Vac, 50/60 Hz[6] | — |
| model | — | 110 SE[5] |
| application focus | — | process development applications[5] |
| process capability | — | deep silicon plasma etching[5] |
| capabilities | — | very high aspect ratio trench etch and profile control[5] |
| configuration | — | multiple configurations with minimum technical intervention[5] |
| System type | — | plasma etch system[7] |
| Supported components | — | MEMS and 3D-IC components[5] |
| Control capability | — | very high aspect ratio trench etch and profile control[7] |
| Physical description | — | compact[5] |
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