Comparison ledger
Plasma-Therm Versaline LACVD, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Versaline LACVDPlasma-Therm | 110Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm Versaline | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 2x loadlock Ports[2] | — |
| Operating system | Windows 7 Professional SP1 OS[2] | — |
| Tool software | Plasma-Therm Cortex[2] | — |
| OES Software | Plasma-Therm EndpointWorks[2] | — |
| Manufacturer | Plasma-Therm[2] | — |
| Model | Versaline[2] | — |
| Wafer size | 6 inch[2] | — |
| Loadlock ports | 2x loadlock Ports[2] | — |
| Process chambers | 2x Process Chambers[2] | — |
| Gas delivery | CF4 (84 sccm), O2 (1000 sccm), He (50 sccm), Ar (50 sccm), O2 (50 sccm), CHF3 (100 sccm), N2 (200 sccm), H2 (100 sccm)[2] | — |
| ICP source | 2 MHz up to 2000 W with temperature control[2] | — |
| Substrate temperature control | via bipolar Johnsen-Rahbek electrostatic chuck[2] | — |
| Backside cooling | With backside Helium cooling[2] | — |
| CCP source | 13.56 MHz up to 600 W[2] | — |
| Vacuum/pumping | thermally managed chamber liner and pump train[2] | — |
| Process monitoring | Optical emission spectroscopy[2] | — |
| DMC/OCR reader | configured for DMC[2] | — |
| Category | Etch[3] | — |
| Optics | optical emission spectroscopy[2] | — |
| Gas configuration | CF4 (84 sccm), O2 (1000 sccm), He (50 sccm), Ar (50 sccm), O2 (50 sccm), CHF3 (100 sccm), N2 (200 sccm), H2 (100 sccm)[2] | — |
| Gas abatement interface | present[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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