Comparison ledger
Plasma-Therm Versaline VCX 600 ICP, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Versaline VCX 600 ICPPlasma-Therm | 110Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm Versaline | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Phase | 1 Phase[2] | — |
| Configuration | 3 Wire[2] | — |
| Source Generator | ENI MKS GMW25[2] | — |
| Wafer Size | 6 inch[2] | — |
| Electrical Input | 1 Phase, 3 Wire, 50/60 Hz, 208/230 Vac, 15 A[3] | — |
| Included Equipment | Chillers, Transformer, Pumps[2] | — |
| Electrical Configuration | 1 Phase - 3 Wire - 50/60 Hz - 208/230 Vac - 15 A[2] | — |
| Vintage | 2013, 2014[2] | — |
| Included Components | Chillers, Transformer, Pumps[2] | — |
| OEM | Plasma-Therm[2] | — |
| Model | Versaline VCX 600[2] | — |
| Category | Etch[3] | — |
| Process type | Inductively coupled plasma (ICP) etching system[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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