Waferpedia

Comparison ledger

APS versus MACS ICP

SPTS APS and SPTS MACS ICP, side by side. Every value shown is drawn from its cited encyclopedia entry.

Side-by-side comparison of selected equipment models
Attribute
APSSPTS
OEMSPTSSPTS
CategoryEtchEtch
Wafer size
Process node
Introduced
Production run
Lifecycle
Lifecycle milestones
Control system
Generation
FamilySPTS APSSPTS MACS ICP
Specifications
System typeICP-based high density plasma source[1]
Optimization targetDielectric etching[1]
Processing modeSingle wafer processing[1]
ClampingElectrostatic clamping[1]
End-point detectionOptical Emission Spectroscopy (EOS) and laser reflectometry/interferometry[1]
Gases availableO2, Ar, CHF3, He, C4F8, SF6, H2[1]
ConfigurationHR chamber[2]
Clamp typestandard WTC[2]
Coil RF powerAdvanced Energy RFG3001, 3kw[2]
Platen RF powerENI ACG-3B 13.56MHZ, 300w[2]
Load lock pumpEbara AAL10[2]
Chamber pumpEbara A30W[2]
Turbo pumpLeybold MAG2000CT[2]
Turbo Pump ControllerLeybold MAG Drive 2000[2]
ChillerATS/DEX-20ADI[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.ch
  2. [2]inventory listing