Comparison ledger
SPTS APS and SPTS RIE-10, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | APSSPTS | RIE-10SPTS |
|---|---|---|
| OEM | SPTS | SPTS |
| Category | Etch | Etch |
| Wafer size | — | 6-inch wafers |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS APS | SPTS RIE-10 |
| Specifications | ||
| System type | ICP-based high density plasma source[1] | — |
| Optimization target | Dielectric etching[1] | — |
| Processing mode | Single wafer processing[1] | — |
| Clamping | Electrostatic clamping[1] | — |
| End-point detection | Optical Emission Spectroscopy (EOS) and laser reflectometry/interferometry[1] | — |
| Gases available | O2, Ar, CHF3, He, C4F8, SF6, H2[1] | — |
| Etch rate | — | 6–10 µm/min[2] |
| Aspect ratio | — | 50:1[2] |
| Selectivity to resist | — | >50:1[2] |
| Selectivity to silicon oxide | — | >100:1[2] |
| Uniformity | — | <5% across 6-inch wafers[2] |
| Primary RF power | — | up to 3,000 W[2] |
| Secondary RF power | — | up to 3,000 W[2] |
| Substrate power | — | up to 300 W[2] |
| Chuck temperature range | — | -15°C to +40°C[2] |
| Sample size handling | — | 6-inch or smaller samples[2] |
| End point detector | — | Claritas End Point Detector[2] |
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