Waferpedia

SPTS

RIE-10

Etch6-inch wafersSPTS RIE-10 family
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SPTSRIE-10
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Wafer size

6-inch wafers

Power

up to 3,000 W[1]

Performance

6–10 µm/min[1]

Gas delivery

>50:1[1]

Optics

Claritas End Point Detector[1]

What is it?

The SPTS RIE-10, also identified in the source as SPTS Rapier DRIE (RIE-10), is described as a deep silicon etching system furnished with dual plasma sources and dual gas inlets. The source lists etch performance, selectivity, uniformity, RF power limits, chuck temperature range, sample size handling, and example applications such as micro and nano pillars, trenches, via etch, through-wafer via etch, and wafer thinning.

What can it run?

Process applications and technology nodes documented for this tool.

  • Si etch only
  • High aspect ratio etch
  • Deep etch
  • Broad feature sizes from nano- to mm-scale in lateral dimension
  • Micro pillars
  • Nano pillars
  • Micro trenches
  • Nano trenches
  • Via etch
  • Through wafer via etch
  • Wafer thinning

What do the numbers mean?

Power & electrical2

Primary RF power
up to 3,000 W[1]
Accurate?
Secondary RF power
up to 3,000 W[1]
Accurate?

Wafer handling3

Uniformity
<5% across 6-inch wafers[1]
Accurate?
Substrate power
up to 300 W[1]
Accurate?
Chuck temperature range
-15°C to +40°C[1]
Accurate?

Gas & chemistry1

Selectivity to resist
>50:1[1]
Accurate?

Optics & imaging1

End point detector
Claritas End Point Detector[1]
Accurate?

Performance1

Etch rate
6–10 µm/min[1]
Accurate?

Configuration & options3

Aspect ratio
50:1[1]
Accurate?
Selectivity to silicon oxide
>100:1[1]
Accurate?
Sample size handling
6-inch or smaller samples[1]
Accurate?
Interested in this tool?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Selectivity to resist>50:1[1]
  • Primary RF powerup to 3,000 W[1]
  • Secondary RF powerup to 3,000 W[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Not publicly documented

The following facts about the RIE-10 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the RIE-10 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the RIE-10 are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the RIE-10 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the RIE-10 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the RIE-10 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (1)Every fact above is drawn from these public sources
  1. [1]cns1.rc.fas.harvard.educns1.rc.fas.harvard.educns1.rc.fas.harvard.edu
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Last updated Jul 29, 2026.

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