Comparison ledger
SPTS APS and SPTS Synapse, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | APSSPTS | SynapseSPTS |
|---|---|---|
| OEM | SPTS | SPTS |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS APS | SPTS Synapse |
| Specifications | ||
| System type | ICP-based high density plasma source[1] | — |
| Optimization target | Dielectric etching[1] | — |
| Processing mode | Single wafer processing[1] | — |
| Clamping | Electrostatic clamping[1] | — |
| End-point detection | Optical Emission Spectroscopy (EOS) and laser reflectometry/interferometry[1] | — |
| Gases available | O2, Ar, CHF3, He, C4F8, SF6, H2[1] | O2, Ar, He, H2, SF6, C4F8, CF4, CHF3[2] |
| Plasma source | — | ICP-based high density plasma source[2] |
| Dedicated materials | — | Etching of SiO2 and SixNy layers[2] |
| Wafer handling | — | Loadlock/chamber transfers for single wafer processing[2] |
| Clamp type | — | Electrostatic clamping[2] |
| Endpoint detection | — | Optical Emission Spectroscopy (EOS) and laser reflectometry/interferometry[2] |
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