Comparison ledger
SPTS MACS ICP and SPTS uEtch, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | MACS ICPSPTS | uEtchSPTS |
|---|---|---|
| OEM | SPTS | SPTS |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS MACS ICP | SPTS uEtch |
| Specifications | ||
| Configuration | HR chamber[1] | — |
| Clamp type | standard WTC[1] | — |
| Coil RF power | Advanced Energy RFG3001, 3kw[1] | — |
| Platen RF power | ENI ACG-3B 13.56MHZ, 300w[1] | — |
| Load lock pump | Ebara AAL10[1] | — |
| Chamber pump | Ebara A30W[1] | — |
| Turbo pump | Leybold MAG2000CT[1] | — |
| Turbo Pump Controller | Leybold MAG Drive 2000[1] | — |
| Chiller | ATS/DEX-20ADI[1] | — |
| Process type | — | Vapor-phase, selective, isotropic etch on sacrificial oxide[2] |
| Process chemistry | — | Anhydrous HF and ethanol (C2H5OH) with nitrogen (N2) gas mixture[2] |
| Operating pressure | — | 125 Torr fixed for the standard processes[2] |
| Standard recipes | — | Recipe1, Recipe2, Recipe3, Recipe4, Recipe5[2] |
| Minimum etch rate - Recipe1 | — | 12 nm/min[2] |
| Minimum etch rate - Recipe2 | — | 38 nm/min[2] |
| Minimum etch rate - Recipe3 | — | 125 nm/min[2] |
| Minimum etch rate - Recipe4 | — | 153 nm/min[2] |
| Minimum etch rate - Recipe5 | — | 175 nm/min[2] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →