Comparison ledger
SPTS Rapier, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | RapierSPTS | 110Tegal |
|---|---|---|
| OEM | SPTS | Tegal |
| Category | Etch | Etch |
| Wafer size | Silicon and Silicon on Insulator (SOI) wafers | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS Rapier | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Process type | Optimized Deep Reactive Ion Etching (DRIE) system[2] | — |
| Wafer materials | Silicon (Si) and Silicon on Insulator (SOI) wafers[2] | — |
| Loader capacity | Single vacuum cassette loader, 25 wafers capacity[2] | — |
| Transport robot | Brooks Magnatran 7 transport robot[2] | — |
| Plasma source | Dual high density Inductive Coupled Plasma (ICP) source[2] | — |
| Clamping | Electrostatic Clamping Chuck (ESC)[2] | — |
| Wafer biasing | Radio and low frequencies wafer biasing, with pulsing possibility[2] | — |
| Mass flow controllers | High speed digital mass flow controllers[2] | — |
| Endpoint systems | Amplified optical emission spectroscopy endpoint system; white light interferometry endpoint system[2] | — |
| Software | Powerful software with ramping curves of process parameters with time[2] | — |
| Module configuration | Unique, patented dual plasma source with multiple operating modes[2] | — |
| RF sources | Two RF independent sources, up to 3 kW each[2] | — |
| Gas showers | Two independent gas showers (center and edge zones)[2] | — |
| Temperature control | Ranges from -10°C to 30°C[2] | — |
| RF wafer biasing | Up to 2 kW with pulsing possibility and duty cycle control[2] | — |
| Low frequency wafer biasing | Up to 1.2 kW with pulsing possibility and duty cycle control[2] | — |
| Wafer-less conditioning | Chamber plasma conditioning or self-cleaning can run wafer-less if needed[2] | — |
| Available process gases | 2x SF6 720 sccm; 2x C4F8 500 sccm; O2 300 sccm and 1000 sccm; Ar 500 sccm; N2 100 sccm[2] | — |
| Standard process: DRIE Trench | Trench 2 µm: 300 nm/loop; trench >200 µm: 800 nm/loop[2] | — |
| Standard process: HAR Hole | 10 µm: 200 nm/loop; trench 2 µm: 165 nm/loop[2] | — |
| Standard process: DRIE-Nano Trench | 350 nm: 150 nm/loop; scallops <50 nm; depth limited to tens of µm[2] | — |
| Standard process: Opto | From 130 nm/min to 370 nm/min; continuous etch process; for shallow and accurate etch; less than 2 µm deep[2] | — |
| Standard process: Si_Release | ~3 µm/min lateral and ~6 µm/min vertical; continuous etch process; isotropic etching of silicon[2] | — |
| Standard process: Oxide_RIE | SiO2: 235 nm/min; Si3N4: 110 nm/min; PR etch rate 170 nm/min; thin layers only (<1 µm); O2 cleaning compulsory[2] | — |
| Standard process: BARC DUV42P | 78 nm/min; Si: 50 nm/min; anti-reflective coating opening after DUV litho[2] | — |
| Standard process: Wafer thinning | 4.4 µm/min; uniformity +/- 3.5%[2] | — |
| Standard process: Dicing | Design dicing streets only (150 µm): 3.4 µm/loop; not for structures <10 µm[2] | — |
| Wafer capacity (cassette loader) | 25 wafers[2] | — |
| Plasma source type | Dual high-density Inductively Coupled Plasma (ICP)[2] | — |
| Chuck type | Electrostatic Clamping Chuck (ESC)[2] | — |
| Wafer biasing frequencies | Radio frequency (up to 2kW) or low frequency (up to 1.2kW), both with pulsing[2] | — |
| RF source power | Up to 3 kW each (two sources)[2] | — |
| Temperature control range | -10°C to 30°C[2] | — |
| Process gases | SF6 (2x720sccm), C4F8 (2x500sccm), O2 (300sccm & 1000sccm), Ar (500sccm), N2 (100sccm)[2] | — |
| Etch type | Optimized Deep Reactive Ion Etching (DRIE)[2] | — |
| Target materials | Silicon (Si) and Silicon on Insulator (SOI) wafers[2] | — |
| Cassette loader capacity | 25 wafers[2] | — |
| Chuck | Electrostatic Clamping Chuck (ESC)[2] | — |
| Endpoint detection | Amplified optical emission spectroscopy endpoint system and white light interferometry endpoint system[2] | — |
| Module sources | Two RF independent sources up to 3 kW[2] | — |
| Clamp voltage | Variable clamp voltage[2] | — |
| Wafer Capacity | 25 wafers (single vacuum cassette loader)[2] | — |
| Source Type | Dual high density Inductive Coupled Plasma (ICP)[2] | — |
| RF Power per Source | Up to 3kW[2] | — |
| Wafer Biasing | RF up to 2kW or low frequency up to 1.2kW, with pulsing[2] | — |
| Temperature Range | -10°C to 30°C[2] | — |
| Process Gases | 2x SF6 (720sccm), 2x C4F8 (500sccm), O2 (300sccm & 1000sccm), Ar (500sccm), N2 (100sccm)[2] | — |
| Supported wafers | Silicon (Si) and Silicon on Insulator (SOI) wafers[2] | — |
| Dual plasma source | Unique, patented dual plasma source[2] | — |
| Type | Optimized Deep Reactive Ion Etching (DRIE) system[2] | — |
| Target wafers | Silicon (Si) and Silicon on Insulator (SOI) wafers[2] | — |
| Cassette loader | Single vacuum cassette loader[2] | — |
| Cassette capacity | 25 wafers[2] | — |
| Module plasma sources | Two RF independent sources, up to 3 kW each[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[3] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[3] |
| Physical description | — | compact[1] |
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