SPTS
Rapier
Plate 01yippeee rapier :3 #hema #historicalfencing #sca #sword #rapier
ItsParkerWatch on YouTubePlate 02🤺 rapier fencing lesson : thrust parry cut ⚔️ #defense #sword #milwaukee @cfsmke
Discovered Fencers MKEWatch on YouTubePlate 03HEMA RAPIER - Can Rapiers cut?? Sources say sure
Kyle ThrushWatch on YouTubePlate 04⚔️ Counter-Parry & Riposte by Disengagement & Yielding Glide #rapier #historicalfencing #swordplay
Boston Academie d'ArmesWatch on YouTubePlate 05SPT in Rapier & Dagger 2021 - John Leggett
John LeggettWatch on YouTubePlate 06Italian Rapier vs Sports Epee | HEMA vs Sport fencing | Weapon Confrontations - part 1
Akademia SzermierzyWatch on YouTubePlate 07HEMA Rapier- Squinter from Longpoint
Kyle ThrushWatch on YouTubePlate 08⚔️ Yielding Parry & Circular Cut #stramazzone #historicalfencing #fencingtactics #pennsic #rapier
Justin Aucoin - Historical SwordplayWatch on YouTubePlate 09Sunbeam Rapier Series V (Series 5) - the rare 1960s British sporting saloon!
idriveaclassicWatch on YouTubePlate 10JT Atwood Rapier and Dagger SPT 2024
JT AtwoodWatch on YouTube
Wafer size
Silicon and Silicon on Insulator (SOI) wafers
Gas delivery
High speed digital mass flow controllers[1]
What is it?
What can it run?
Process applications and technology nodes documented for this tool.
- Deep reactive ion etching of silicon and silicon-on-insulator wafers
- Trench etching
- Hole etching
- Nano-pulsed etching
- Optical etching
- Silicon release
- Oxide RIE
- BARC opening
- Wafer thinning
- Dicing
Why won't it start?
Documented failure modes, common issues, and field considerations.
- The source notes that etch rates are design dependent and reduce with time and increasing aspect ratio (ARDE).
- For the HAR hole process, the source states the last 300 nm of mask is not viable because of faceting.
- For the Dicing process, the source states it is not for structures smaller than 10 µm due to too large CD loss.
What do the numbers mean?
Power & electrical3
Vacuum & pumping1
Wafer handling6
- Wafer-less conditioning
- Chamber plasma conditioning or self-cleaning can run wafer-less if needed[1]
Gas & chemistry3
- Available process gases
- 2x SF6 720 sccm; 2x C4F8 500 sccm; O2 300 sccm and 1000 sccm; Ar 500 sccm; N2 100 sccm[1]
Optics & imaging7
- Endpoint systems
- Amplified optical emission spectroscopy endpoint system; white light interferometry endpoint system[1]
- Standard process: DRIE-Nano Trench
- 350 nm: 150 nm/loop; scallops <50 nm; depth limited to tens of µm[1]
- Standard process: Opto
- From 130 nm/min to 370 nm/min; continuous etch process; for shallow and accurate etch; less than 2 µm deep[1]
- Standard process: Oxide_RIE
- SiO2: 235 nm/min; Si3N4: 110 nm/min; PR etch rate 170 nm/min; thin layers only (<1 µm); O2 cleaning compulsory[1]
- Standard process: BARC DUV42P
- 78 nm/min; Si: 50 nm/min; anti-reflective coating opening after DUV litho[1]
Control & software2
Configuration & options5
What replaced it?
Related models
- siblingAlcatel AMS 200 SE— Listed in the same etching equipment section.source[2]
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Loader capacitySingle vacuum cassette loader, 25 wafers capacity[1]
- Mass flow controllersHigh speed digital mass flow controllers[1]
- RF sourcesTwo RF independent sources, up to 3 kW each[1]
- Gas showersTwo independent gas showers (center and edge zones)[1]
- RF wafer biasingUp to 2 kW with pulsing possibility and duty cycle control[1]
- Low frequency wafer biasingUp to 1.2 kW with pulsing possibility and duty cycle control[1]
- Available process gases2x SF6 720 sccm; 2x C4F8 500 sccm; O2 300 sccm and 1000 sccm; Ar 500 sccm; N2 100 sccm[1]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Not publicly documented
The following facts about the Rapier are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Rapier are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Rapier are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Rapier are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the Rapier is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Rapier are on record.
Answerable by: an OEM parts catalog or a service engineer
Sources & citations
Sources (5)Every fact above is drawn from these public sources
- [1]epfl.ch — epfl.chepfl.ch
- [2]epfl.chepfl.ch
- [3]Dry Etching — tudelft.nltudelft.nl
- [4]Tool Details - Harvard CNS — cns1.rc.fas.harvard.educns1.rc.fas.harvard.edu
- [5]SPTS Si DRIE processes — spts.com (Apr 25, 2018)web.archive.org
Last updated Jul 29, 2026.
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