Comparison ledger
SPTS RIE-10 and SPTS Synapse, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | RIE-10SPTS | SynapseSPTS |
|---|---|---|
| OEM | SPTS | SPTS |
| Category | Etch | Etch |
| Wafer size | 6-inch wafers | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS RIE-10 | SPTS Synapse |
| Specifications | ||
| Etch rate | 6–10 µm/min[1] | — |
| Aspect ratio | 50:1[1] | — |
| Selectivity to resist | >50:1[1] | — |
| Selectivity to silicon oxide | >100:1[1] | — |
| Uniformity | <5% across 6-inch wafers[1] | — |
| Primary RF power | up to 3,000 W[1] | — |
| Secondary RF power | up to 3,000 W[1] | — |
| Substrate power | up to 300 W[1] | — |
| Chuck temperature range | -15°C to +40°C[1] | — |
| Sample size handling | 6-inch or smaller samples[1] | — |
| End point detector | Claritas End Point Detector[1] | — |
| Plasma source | — | ICP-based high density plasma source[2] |
| Dedicated materials | — | Etching of SiO2 and SixNy layers[2] |
| Wafer handling | — | Loadlock/chamber transfers for single wafer processing[2] |
| Clamp type | — | Electrostatic clamping[2] |
| Endpoint detection | — | Optical Emission Spectroscopy (EOS) and laser reflectometry/interferometry[2] |
| Gases available | — | O2, Ar, He, H2, SF6, C4F8, CF4, CHF3[2] |
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