Comparison ledger
SPTS RIE-10 and SPTS uEtch, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | RIE-10SPTS | uEtchSPTS |
|---|---|---|
| OEM | SPTS | SPTS |
| Category | Etch | Etch |
| Wafer size | 6-inch wafers | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS RIE-10 | SPTS uEtch |
| Specifications | ||
| Etch rate | 6–10 µm/min[1] | — |
| Aspect ratio | 50:1[1] | — |
| Selectivity to resist | >50:1[1] | — |
| Selectivity to silicon oxide | >100:1[1] | — |
| Uniformity | <5% across 6-inch wafers[1] | — |
| Primary RF power | up to 3,000 W[1] | — |
| Secondary RF power | up to 3,000 W[1] | — |
| Substrate power | up to 300 W[1] | — |
| Chuck temperature range | -15°C to +40°C[1] | — |
| Sample size handling | 6-inch or smaller samples[1] | — |
| End point detector | Claritas End Point Detector[1] | — |
| Process type | — | Vapor-phase, selective, isotropic etch on sacrificial oxide[2] |
| Process chemistry | — | Anhydrous HF and ethanol (C2H5OH) with nitrogen (N2) gas mixture[2] |
| Operating pressure | — | 125 Torr fixed for the standard processes[2] |
| Standard recipes | — | Recipe1, Recipe2, Recipe3, Recipe4, Recipe5[2] |
| Minimum etch rate - Recipe1 | — | 12 nm/min[2] |
| Minimum etch rate - Recipe2 | — | 38 nm/min[2] |
| Minimum etch rate - Recipe3 | — | 125 nm/min[2] |
| Minimum etch rate - Recipe4 | — | 153 nm/min[2] |
| Minimum etch rate - Recipe5 | — | 175 nm/min[2] |
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