Comparison ledger
SPTS RIE-10 and SPTS XeF2, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | RIE-10SPTS | XeF2SPTS |
|---|---|---|
| OEM | SPTS | SPTS |
| Category | Etch | Etch |
| Wafer size | 6-inch wafers | Up to 6-inch wafers |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2013 Acquisition of XACTIX, Inc. · 2013 XACTIX acquisition |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS RIE-10 | SPTS XeF2 |
| Specifications | ||
| Etch rate | 6–10 µm/min[1] | — |
| Aspect ratio | 50:1[1] | — |
| Selectivity to resist | >50:1[1] | — |
| Selectivity to silicon oxide | >100:1[1] | — |
| Uniformity | <5% across 6-inch wafers[1] | — |
| Primary RF power | up to 3,000 W[1] | — |
| Secondary RF power | up to 3,000 W[1] | — |
| Substrate power | up to 300 W[1] | — |
| Chuck temperature range | -15°C to +40°C[1] | — |
| Sample size handling | 6-inch or smaller samples[1] | — |
| End point detector | Claritas End Point Detector[1] | — |
| Etch type | — | Isotropic etch[2] |
| Selectivity | — | Over 1000:1 between Si/photoresist, Si/SiO2, and Si/SiN[2] |
| Gas flow modes | — | Continuous and pulsed gas flow[2] |
| Operating temperature | — | Room temperature[2] |
| Plasma | — | No plasma[2] |
| Substrate size | — | Up to 6-inch wafers[2] |
| Isotropic etch materials | — | Si, Mo, Ge, W, C[2] |
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