SPTS

Plate 01XeF2 Pulsing Etcher - How to prepare the sample
Plate 02XeF2 Pulsing Etcher - Standard Operating Procedures
Plate 03Enhanced, Site-Specific Si Etch with XeF2 Gas and FIB
Wafer size
Up to 6-inch wafers
Gas delivery
Continuous and pulsed gas flow[2]
Process applications and technology nodes documented for this tool.
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
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The following facts about the XeF2 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented variants, configuration options, or revision breakpoints of the XeF2 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the XeF2 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the XeF2 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the XeF2 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the XeF2 are on record.
Answerable by: an OEM parts catalog or a service engineer
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Last updated Jul 29, 2026.
The Tegal 1511e is a tri-electrode dual-frequency plasma etch system for processing three- to six-inch wafers.
General referenceLam Research 2300 is an etch system used for pattern transfer in semiconductor processing. It belongs to the class of plasma-based etch equipment used to remove selected material from a wafer according to a patterned mask.