Comparison ledger
SPTS Synapse and SPTS uEtch, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | SynapseSPTS | uEtchSPTS |
|---|---|---|
| OEM | SPTS | SPTS |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS Synapse | SPTS uEtch |
| Specifications | ||
| Plasma source | ICP-based high density plasma source[1] | — |
| Dedicated materials | Etching of SiO2 and SixNy layers[1] | — |
| Wafer handling | Loadlock/chamber transfers for single wafer processing[1] | — |
| Clamp type | Electrostatic clamping[1] | — |
| Endpoint detection | Optical Emission Spectroscopy (EOS) and laser reflectometry/interferometry[1] | — |
| Gases available | O2, Ar, He, H2, SF6, C4F8, CF4, CHF3[1] | — |
| Process type | — | Vapor-phase, selective, isotropic etch on sacrificial oxide[2] |
| Process chemistry | — | Anhydrous HF and ethanol (C2H5OH) with nitrogen (N2) gas mixture[2] |
| Operating pressure | — | 125 Torr fixed for the standard processes[2] |
| Standard recipes | — | Recipe1, Recipe2, Recipe3, Recipe4, Recipe5[2] |
| Minimum etch rate - Recipe1 | — | 12 nm/min[2] |
| Minimum etch rate - Recipe2 | — | 38 nm/min[2] |
| Minimum etch rate - Recipe3 | — | 125 nm/min[2] |
| Minimum etch rate - Recipe4 | — | 153 nm/min[2] |
| Minimum etch rate - Recipe5 | — | 175 nm/min[2] |
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