Comparison ledger
SPTS uEtch and SPTS XeF2, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | uEtchSPTS | XeF2SPTS |
|---|---|---|
| OEM | SPTS | SPTS |
| Category | Etch | Etch |
| Wafer size | — | Up to 6-inch wafers |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2013 Acquisition of XACTIX, Inc. · 2013 XACTIX acquisition |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS uEtch | SPTS XeF2 |
| Specifications | ||
| Process type | Vapor-phase, selective, isotropic etch on sacrificial oxide[1] | — |
| Process chemistry | Anhydrous HF and ethanol (C2H5OH) with nitrogen (N2) gas mixture[1] | — |
| Operating pressure | 125 Torr fixed for the standard processes[1] | — |
| Standard recipes | Recipe1, Recipe2, Recipe3, Recipe4, Recipe5[1] | — |
| Minimum etch rate - Recipe1 | 12 nm/min[1] | — |
| Minimum etch rate - Recipe2 | 38 nm/min[1] | — |
| Minimum etch rate - Recipe3 | 125 nm/min[1] | — |
| Minimum etch rate - Recipe4 | 153 nm/min[1] | — |
| Minimum etch rate - Recipe5 | 175 nm/min[1] | — |
| Etch type | — | Isotropic etch[2] |
| Selectivity | — | Over 1000:1 between Si/photoresist, Si/SiO2, and Si/SiN[2] |
| Gas flow modes | — | Continuous and pulsed gas flow[2] |
| Operating temperature | — | Room temperature[2] |
| Plasma | — | No plasma[2] |
| Substrate size | — | Up to 6-inch wafers[2] |
| Isotropic etch materials | — | Si, Mo, Ge, W, C[2] |
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