Waferpedia

Comparison ledger

MACS ICP HRversus110

STS MACS ICP HR, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
110Tegal
OEMSTSTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilySTS MACS ICP HRTegal 110
Cited variants—
Specifications
Configuration1 Chamber[2]—
Voltage380V[2]—
Frequency60Hz[2]—
Phase3 Phase[2]—
ManufacturerSTS[2]—
ModelMACS ICP HR[2]—
CategoryEtch[3]—
Wafer size8 inch[2]—
Current40A[2]—
Vintage2003[2]—
ConditionRefurbished, as-is, where is[4]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[5]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[5]
Physical description—compact[1]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]hommer.com.twhommer.com.tw
  5. [5]waferpedia.comwaferpedia.com