MACS ICP HR

Etch systems remove material from wafer surfaces in patterned areas after lithography has defined where material should remain. Plasma etch tools are used to transfer patterns into films and device structures with controlled directionality and selectivity.

Inductively coupled plasma etchers generate a plasma from process gases and use that plasma to chemically and physically remove exposed material from the wafer. High density plasma operation helps such tools sustain reactive species while independently tuning wafer bias to shape anisotropy and profile control.

A dry etch system processes wafers inside a vacuum chamber, where gas flow, pressure, plasma power, and wafer conditions are adjusted to achieve the target etch behavior. Chamber based architecture allows recipes to be matched to different films and profile goals.

Plasma etchers are used after pattern formation steps have created a mask on the wafer surface. Plasma etchers sit between lithography and later steps such as resist strip, cleaning, film deposition, metrology, or additional pattern transfer, depending on the device flow.

Dry etch systems are used for pattern transfer in semiconductor fabrication and related microfabrication flows. Inductively coupled plasma etchers are commonly applied where a process needs controlled sidewalls, material selectivity, and repeatable feature definition in thin films or substrate layers.