Comparison ledger
STS Multiplex ASE ICP Deep Silicon, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | |
|---|---|---|
| OEM | STS | Tegal |
| Category | Etch | Etch |
| Wafer size | Manual wafer lock | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | STS Multiplex | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Wafer size | Manual wafer lock[2] | — |
| Configuration | Low and high frequency ICP (Inductively Coupled Plasma) etch system.[2] | — |
| OEM | STS[2] | — |
| Model | Multiplex ASE[2] | — |
| Equipment type | Deep Silicon Etcher (Inductively Coupled Plasma)[2] | — |
| Wafer sizes | 6 inch[2] | — |
| Wafer lock | Manual wafer lock[2] | — |
| Plasma frequency | Low and high frequency ICP (Inductively Coupled Plasma)[2] | — |
| Process description | ASE (Advanced Silicon Etch) process consists of alternating cycles of etching and protective polymer deposition[2] | — |
| Application | Deep Si trench etching of a single 6" [150mm] substrate[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[3] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[3] |
| Physical description | — | compact[1] |
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