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Multiplex ICP Advanced Oxideversus110

STS Multiplex ICP Advanced Oxide, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
110Tegal
OEMSTSTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilySTS Multiplex ICPTegal 110
Cited variants—
Specifications
Voltage208 V[2]—
Configuration80 A[2]—
Frequency60 Hz[2]—
RF GeneratorsENI ACG10B 1kW (13.56MHz)[2]—
Clamp TypeStandard WTC[2]—
Platen TypeDomed[2]—
Turbo PumpNone[2]—
MACs RobotNone[2]—
Pumping SystemNone[2]—
ManufacturerSTS[2]—
ModelMultiplex ICP[2]—
Model nameMultiplex ICP Advanced Oxide Etcher (AOE)[2]—
Wafer sizes6, 8 inch[2]—
Electrical208 V - 80 A - 3 Ph - 60 Hz[2]—
RF generator and matching unitCoil RF generator and matching unit[2]—
RF generatorENI ACG10B 1kW (13.56MHz)[2]—
Load lockCarousel Vacuum Load lock[2]—
Gas deliveryGas box[3]—
GasesCHF3, CF4, SF6, O2[2]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[4]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[4]
Physical description—compact[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]waferpedia.comwaferpedia.com