Comparison ledger
Tegal 110, Tegal 901e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | 901eTegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm to 150 mm round substrates; rectangular substrates from 100 mm to 125 mm on a side |
| Process node | — | down to 0.5 micron |
| Introduced | — | 2000 |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | 900 Series |
| Family | Tegal 110 | Tegal 901e |
| Cited variants |
| — |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[2] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[2] | — |
| Physical description | compact[1] | — |
| Type | — | diode plasma etcher[3] |
| Fixed electrode gap | — | 38 mm[3] |
| Round substrate handling | — | 75 mm to 150 mm round silicon and GaAs substrates[3] |
| Rectangular substrate handling | — | rectangular substrates from 100 mm to 125 mm on a side[3] |
| Design-rule suitability | — | best suited for technology design rules down to 0.5 micron[3] |
| Electrode gap | — | 38 mm fixed[3] |
| Round substrate size | — | 75 mm to 150 mm[3] |
| Rectangular substrate size | — | 100 mm to 125 mm on a side[3] |
| Best suited design rules | — | Down to 0.5 micron[3] |
| Wafer size | — | Wafer Size Range[4] |
| Phase | — | Power Requirements 230 V 16.0 A 50/60 Hz 1 Phase[4] |
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