Comparison ledger
Tegal 110, Ulvac NE-550, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | NE-550Ulvac |
|---|---|---|
| OEM | Tegal | Ulvac |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Ulvac NE-550 |
| Cited variants |
|
|
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[3] | Multipurpose high-density, low-pressure plasma etching system[4] |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[3] | — |
| Physical description | compact[1] | — |
| Equipment name | — | Ulvac NE-550 Chlorine Etcher[4] |
| Performance note | — | Good uniformity and repeatability[4] |
| Materials etched | — | III-V, metals, ceramics, and optical materials[4] |
| Wafer Diameter(s) | — | 100 mm, 150 mm, 200 mm[5] |
| Batch sizes | — | 100 mm: 1, 150 mm: 1, 200 mm: 1[5] |
| Wafer thickness | — | 200 - 1000 µm[5] |
| Wafer materials | — | Pyrex (Corning 7740), quartz (fused silica), silicon on insulator, quartz (single crystal), silicon carbide, fused silica, silicon germanium, silicon[5] |
| Plasma Source | — | ISM (Inductively Super Magnetron)[2] |
| Electrode | — | STAR Electrode[2] |
| Wafer diameters | — | 100 mm, 150 mm, 200 mm[5] |
| Wafer thickness range | — | 200 – 1000 µm[5] |
| Batch sizes (wafers per run) | — | 100 mm: 1, 150 mm: 1, 200 mm: 1[5] |
| Electrode type | — | STAR Electrode[2] |
| End-point detection | — | Optical Emission EPD (optional), Laser Interference EPD (optional)[2] |
| Wafer temperature control | — | ESC with He cooling, Mechanical Chuck[2] |
| Maintenance | — | Simple maintenance mechanism[2] |
| Batch size | — | 1 wafer (100 mm, 150 mm, 200 mm)[5] |
| Wafer geometry | — | 1-flat, 2-flat, notched, no-flat[5] |
| Process type | — | High-density plasma etching[2] |
| Plasma source | — | ISM (Inductively Super Magnetron) Plasma Source[2] |
| Intended use | — | R&D test facilities such as universities and government agencies[2] |
| Location (UCLA) | — | CNSI Site[4] |
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