Comparison ledger
Tegal 110, Veeco Nexus IBE350, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | Nexus IBE350Veeco |
|---|---|---|
| OEM | Tegal | Veeco |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Veeco Nexus IBE350 |
| Cited variants |
| — |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[2] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[2] | — |
| Physical description | compact[1] | — |
| Etch type | — | Broad-beam ion etcher[3] |
| Ion source | — | 350 mm diameter Argon ion source with RF plasma generator[3] |
| RF plasma generator frequency | — | 1.8 MHz[3] |
| RF plasma generator maximum power | — | 2 kW[3] |
| Energy range | — | 50 V to 800 V[3] |
| Operating pressure | — | 10^-4 mbar[3] |
| Base pressure | — | 10^-7 mbar[3] |
| Ion beam width | — | 350 mm[3] |
| Ion optics | — | Three-grids collimation optics system with molybdenum electrostatic apertures[3] |
| Charge neutralizer | — | Electron-emitting neutralizer downstream from the ion optics[3] |
| Substrate temperature | — | Less than 90 °C[3] |
| Substrate rotation | — | Up to 10 rpm[3] |
| Substrate tilt angle | — | +90° to -70°[3] |
| Tilt angle control | — | ±0.5°[3] |
| Endpoint detection | — | Secondary Ions Mass Spectroscopy (SIMS) system[3] |
| Process type | — | Ion beam etching (physical sputtering)[3] |
| RF generator frequency | — | 1.8 MHz[3] |
| RF generator power | — | 2 kW maximum[3] |
| Beam energy range | — | 50 V to 800 V[3] |
| Substrate fixture temperature | — | Less than 90 °C (Veeco FlowCool)[3] |
| Substrate rotation speed | — | Up to 10 rpm[3] |
| Substrate tilt angle range | — | +90° to -70° with ±0.5° accuracy[3] |
| Mechanical shutter | — | Present downstream of grids optics[3] |
| Tool type | — | Broad-beam ion etcher[3] |
| RF frequency | — | 1.8 MHz[3] |
| RF power | — | 2 kW maximum[3] |
| Ion energy range | — | 50 V to 800 V[3] |
| Ion beam diameter | — | 350 mm[3] |
| Collimation optics | — | Three-grids collimation optics system[3] |
| Charge neutralization | — | Plasma Bridge Neutralizer downstream from the ion optics[3] |
| Fixture rotation speed | — | Up to 10 rpm[3] |
| Fixture tilt range | — | +90° to -70°[3] |
| Fixture tilt control | — | Accurate control +/-0.5°[3] |
| Ion source type | — | ICP source, 350mm diameter, RF plasma generator, 1.8MHz, 2kW maximum[3] |
| Grid system | — | Three-grids collimation optics system (molybdenum electrostatic apertures)[3] |
| Neutralizer type | — | Plasma Bridge Neutralizer (PBN)[3] |
| Cooling system | — | Veeco patented flowcool system[3] |
| Process gas | — | argon[3] |
| Beam collimation optics | — | three-grids collimation optics system[3] |
| Fixture tilt angle | — | +90° to -70°[3] |
| SIMS endpoint detection | — | included[3] |
| Gas | — | Argon[3] |
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