Waferpedia

Veeco

Nexus IBE350

EtchVeeco Nexus IBE350 family
Research Quality: 40% complete
Nexus IBE350 — epfl.ch
Fig. 01Nexus IBE350epfl.ch[1]

Power

1.8 MHz[1]

Vacuum

10^-4 mbar[1]

What is it?

The Veeco Nexus IBE350 is described as a broad-beam ion etcher that uses Argon ions extracted from an ICP source and directed through a three-grids optics system to form a mono-energetic beam for pure physical sputtering. The source states a 350 mm ion beam, energy capability from 50 V to 800 V, low-vacuum and base-pressure values, a charge neutralizer, adjustable substrate fixture tilt and rotation, and a Secondary Ions Mass Spectroscopy system for real-time endpoint detection.

What can it run?

Process applications and technology nodes documented for this tool.

  • Etching piezoelectric materials
  • Etching ferroelectric materials
  • Etching magnetic materials
  • Etching III-V materials such as GaAs, InP, GaN, and AlN
  • Etching ohmic metals such as Au, Pt, Cu, and Ir
  • Etching hard mask materials such as Ag, TiWN, and Ni
  • Angular etch and shape control of complex structures

What do the numbers mean?

Power & electrical4

Ion source
350 mm diameter Argon ion source with RF plasma generator[1]
Accurate?
RF plasma generator frequency
1.8 MHz[1]
Accurate?
RF plasma generator maximum power
2 kW[1]
Accurate?
Energy range
50 V to 800 V[1]
Accurate?

Vacuum & pumping2

Operating pressure
10^-4 mbar[1]
Accurate?
Base pressure
10^-7 mbar[1]
Accurate?

Wafer handling3

Substrate temperature
Less than 90 °C[1]
Accurate?
Substrate rotation
Up to 10 rpm[1]
Accurate?
Substrate tilt angle
+90° to -70°[1]
Accurate?

Optics & imaging2

Ion optics
Three-grids collimation optics system with molybdenum electrostatic apertures[1]
Accurate?
Charge neutralizer
Electron-emitting neutralizer downstream from the ion optics[1]
Accurate?

Control & software1

Tilt angle control
±0.5°[1]
Accurate?

Dimensions & facilities1

Ion beam width
350 mm[1]
Accurate?

Configuration & options2

Etch type
Broad-beam ion etcher[1]
Accurate?
Endpoint detection
Secondary Ions Mass Spectroscopy (SIMS) system[1]
Accurate?
Interested in this tool?
Embed spec card

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Ion source350 mm diameter Argon ion source with RF plasma generator[1]
  • RF plasma generator frequency1.8 MHz[1]
  • RF plasma generator maximum power2 kW[1]
  • Energy range50 V to 800 V[1]
  • Operating pressure10^-4 mbar[1]
  • Base pressure10^-7 mbar[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Not publicly documented

The following facts about the Nexus IBE350 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Nexus IBE350 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Nexus IBE350 are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the Nexus IBE350 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the Nexus IBE350 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Nexus IBE350 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (1)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.chepfl.ch
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Last updated Jul 29, 2026.

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