Veeco
Nexus IBE350
The Veeco Nexus IBE350 is a broad-beam ion etcher. The Veeco Nexus IBE350 uses a 350 mm argon ion source. The Veeco Nexus IBE350 includes a SIMS system for real-time end-point detection.[1]
What it is
The Veeco Nexus IBE350 is a broad-beam ion etcher. The Veeco Nexus IBE350 uses argon ions extracted from an ICP source and directed as a mono-energetic beam for etching by pure physical sputtering. The Veeco Nexus IBE350 has a 350 mm ion beam and includes a SIMS system for precise, sensitive, real-time end point detection.[1][2][3]
How it works
The Veeco Nexus IBE350 extracts argon ions from a 350 mm diameter ICP source with an RF plasma generator operating at 1.8 MHz and up to 2 kW. The Veeco Nexus IBE350 provides an energy range from 50 V to 800 V. The Veeco Nexus IBE350 uses a three-grids collimation optics system with molybdenum electrostatic apertures to extract, accelerate, and collimate the ions into a uniform beam.[1][2]
The Veeco Nexus IBE350 places a mechanical shutter downstream of the grid optics to protect the process chamber until the beam is stabilized. The Veeco Nexus IBE350 uses a Plasma Bridge Neutralizer downstream of the ion optics to emit electrons and avoid space or surface charging. The substrate fixture on the Veeco Nexus IBE350 is kept below 90 °C, rotates up to 10 rpm, and adjusts from +90° to -70° with ±0.5° control for angular etch and shape control of complex structures.[1][2]
Where it fits in the process flow
The Veeco Nexus IBE350 is employed in process flows where ion beam etching is required, typically after photolithographic patterning and before subsequent deposition or metrology steps. The Veeco Nexus IBE350 operates by pure physical sputtering with no chemistry dependence, which supports processes that need low ion damage or anisotropic profile control across a range of materials.[2][1]
Applications
The Veeco Nexus IBE350 is used to etch piezo and ferroelectric materials, magnetic materials, III-V materials including GaAs, InP, GaN, and AlN, ohmic metals including Au, Pt, Cu, and Ir, and hard mask materials including Ag, TiWN, and Ni. The Veeco Nexus IBE350 supports angular etch and shape control of complex structures. The Veeco Nexus IBE350 combines high vacuum capability with pure physical sputtering to reduce chamber-sample contamination and memory effects.[1][2]
- Etching piezoelectric materials
- Etching ferroelectric materials
- Etching magnetic materials
- Etching III-V materials such as GaAs, InP, GaN, and AlN
- Etching ohmic metals such as Au, Pt, Cu, and Ir
- Etching hard mask materials such as Ag, TiWN, and Ni
- Angular etch and shape control of complex structures
Why won't it start?
Documented failure modes, common issues, and field considerations.
- Pure physical sputtering causes redeposition of etched materials in regions not directly exposed to the ions.
What do the numbers mean?
Power & electrical12
Vacuum & pumping4
Wafer handling8
Gas & chemistry2
Optics & imaging9
- Ion optics
- Three-grids collimation optics system with molybdenum electrostatic apertures[1]2 sources
Control & software2
Dimensions & facilities1
Configuration & options19
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Ion source350 mm diameter Argon ion source with RF plasma generator[1]
- RF plasma generator frequency1.8 MHz[1]
- RF plasma generator maximum power2 kW[1]
- Energy range50 V to 800 V[1]
- Operating pressure10^-4 mbar[1]
- Base pressure10^-7 mbar[1]
- RF generator frequency1.8 MHz[1]
- RF generator power2 kW maximum[1]
- Beam energy range50 V to 800 V[1]
- Base pressure10⁻⁷ mbar[1]
- Operating pressure10⁻⁴ mbar[1]
- RF frequency1.8 MHz[1]
- RF power2 kW maximum[1]
- Ion energy range50 V to 800 V[1]
- Ion source typeICP source, 350mm diameter, RF plasma generator, 1.8MHz, 2kW maximum[1]
- Process gasargon[1]
- Ion source typeICP source with RF plasma generator[1]
- GasArgon[1]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What type of etcher is the Veeco Nexus IBE350?
What beam energy range does the Veeco Nexus IBE350 provide?
The Veeco Nexus IBE350 provides an energy range from 50 V to 800 V.[1][2]
What ion source configuration does the Veeco Nexus IBE350 use?
The Veeco Nexus IBE350 uses a 350 mm diameter argon ICP source with an RF plasma generator operating at 1.8 MHz and up to 2 kW.[1][2]
Not publicly documented
The following facts about the Nexus IBE350 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Nexus IBE350 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Nexus IBE350 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Nexus IBE350 are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the Nexus IBE350 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Nexus IBE350 are on record.
Answerable by: an OEM parts catalog or a service engineer
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]epfl.ch — epfl.chepfl.ch
- [2]waferpedia.com — waferpedia.comwaferpedia.com
- [3]Veeco Nexus IBE350 family | Waferpedia — waferpedia.comwaferpedia.com
Last updated Oct 20, 2026.
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