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1511eversusNE 950 ICP-RIE

Tegal 1511e, Ulvac NE 950 ICP-RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
1511eTegal
OEMTegalUlvac
CategoryEtchEtch
Wafer sizethree- to six-inch wafersφ2’ φ4’ φ6’ φ8’ Single Wafer Auto Transfer
Process node——
Introduced1984—
Production run1984–—
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyTegal 1511eUlvac NE 950
Specifications
tool typetri-electrode dual-frequency plasma etch system[1]—
wafer sizethree- to six-inch wafers[1]—
first sold1984[1]—
system characteristicfirst vacuum-loadlocked dual-frequency tri-electrode etch system[1]—
First vacuum-loadlocked dual-frequency tri-electrode etch systemYes[1]—
Configuration—Gas Box:[2]
Gas 1 Horiba STEC SEC-E40 Ar—100SCCM[2]
Gas 2 Horiba STEC SEC-E40 O2—100SCCM[2]
Gas 3 Horiba STEC SEC-E40 CHF3—100SCCM[2]
Cooling Gas—MKS 649A 50SCCM[2]
Match Box 1—AMV-1000-12.5M-CT[2]
Match Box 2—AMV-1000-AV3[2]
Valve—MKS T3PIA 26696[2]
Gauge—MKS E28D[2]
Process type—ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etch)[2]
Wafer size—2" to 12" wafers[2]
Chuck—φ 305mm (φ2’ φ4’ φ6’ φ8’)[2]
RF Generator 1—AX-1000 (AD-TEC)[2]
RF Generator 2—AX-1000 (AD-TEC)[2]
Gas 1—Horiba STEC SEC-E40 Ar: 100SCCM[2]
Gas 2—Horiba STEC SEC-E40 O2: 100SCCM[2]
Gas 3—Horiba STEC SEC-E40 CHF3: 100SCCM[2]
Gas 4—Horiba STEC SEC-E440J BCL3: 200SCCM[2]
Gas 5—Horiba STEC SEC-E440J CL2: 200SCCM[2]
Gas 6—Horiba STEC SEC-E440J SiCL4: 200SCCM[2]
Pressure valve—MKS T3PIA 26696[2]
Turbo pump—Shimadzu E1-D2203MT / TMP-2203LMTG[2]
Dry pump—Ulvac HR60[2]
Slit Valve—SMC XGT312-50336-1A[2]
Pirani Gauge—Pfeiffer Vacuum TPR280[2]
Vaucum Gauge—Ulvac M-24[2]
Temp Control—Risshi EXL 1106[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing