Comparison ledger
Zeiss 1540EsB and Zeiss Orion NanoFab, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | 1540EsBZeiss | Orion NanoFabZeiss |
|---|---|---|
| OEM | Zeiss | Zeiss |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Zeiss 1540EsB | Zeiss Orion NanoFab |
| Specifications | ||
| System type | FIB/SEM system[1] | — |
| Electron column | FESEM electron column[1] | — |
| Imaging resolution | resolution approaching the 2 nm range[1] | — |
| Ion column | Ga ion column[1] | — |
| Milling capability | allows for milling (sputtering) of materials from the sample[1] | — |
| Deposition materials | Pt, W, and SiOx[1] | — |
| Gas Injection System etch gases | XeF2 and H2O[1] | — |
| Detector options | multiple detector options for different imaging modes[1] | — |
| Instrument type | — | Focused ion beam (FIB) microscope[2] |
| Functions | — | Ultrahigh-resolution imaging, direct writing, and lithography platform[2] |
| Beam species | — | Operates with either He or Ne[2] |
| He beam probe | — | ~0.5 nm[2] |
| He beam imaging performance | — | Produces sub-5 nm resolution images and patterns with large depth of field[2] |
| Ne beam application range | — | Direct write and lithography applications between 10 and 100 nm[2] |
| Sample capability | — | Non-conductive samples can be imaged with the aid of an electron flood gun[2] |
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