Comparison ledger
Zeiss Orion NanoFab and Zeiss UEM, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | Orion NanoFabZeiss | UEMZeiss |
|---|---|---|
| OEM | Zeiss | Zeiss |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Zeiss Orion NanoFab | Zeiss UEM |
| Specifications | ||
| Instrument type | Focused ion beam (FIB) microscope[1] | — |
| Functions | Ultrahigh-resolution imaging, direct writing, and lithography platform[1] | — |
| Beam species | Operates with either He or Ne[1] | — |
| He beam probe | ~0.5 nm[1] | — |
| He beam imaging performance | Produces sub-5 nm resolution images and patterns with large depth of field[1] | — |
| Ne beam application range | Direct write and lithography applications between 10 and 100 nm[1] | — |
| Sample capability | Non-conductive samples can be imaged with the aid of an electron flood gun[1] | — |
| Configuration | — | Brightfield[2] |
| Illumination Type | — | Reflected Light[2] |
| Binocular Angle | — | 45°[2] |
| Magnification | — | 8X[2] |
| Magnification Changer | — | 1.25X, 1.6X, 2X[2] |
| Illumination Power | — | 12 V, 60 watts[2] |
| Power Supply included | — | YES[2] |
| Stage Type | — | Coaxial X-Y[2] |
| Length | — | 273 mm (10.78 in)[2] |
| Width | — | 356 mm (14.016 in)[2] |
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