Waferpedia

Comparison ledger

0010 47763versusRIE-10

Applied Materials 0010 47763, SPTS RIE-10, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010 47763Applied Materials
RIE-10SPTS
OEMApplied MaterialsSPTS
CategoryEtchEtch
Wafer size—6-inch wafers
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010 47763SPTS RIE-10
Specifications
Configuration2nd Source New[1]—
TypeMonopolar Dual Heated[2]—
DescriptionASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3]—
Possible MaterialsAl2O3 (aluminum oxide) or AlN (aluminum nitride)[2]—
Model0010-47763[1]—
OEMApplied Materials[1]—
Material (possible)Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2]—
ApplicationFixing wafers in etching process (PVD, CVD, ETCH)[2]—
Quantity available (source)1[2]—
Etch rate—6–10 µm/min[4]
Aspect ratio—50:1[4]
Selectivity to resist—>50:1[4]
Selectivity to silicon oxide—>100:1[4]
Uniformity—<5% across 6-inch wafers[4]
Primary RF power—up to 3,000 W[4]
Secondary RF power—up to 3,000 W[4]
Substrate power—up to 300 W[4]
Chuck temperature range—-15°C to +40°C[4]
Sample size handling—6-inch or smaller samples[4]
End point detector—Claritas End Point Detector[4]
Wafer size—6-inch wafers[5]
Tool type—deep silicon etching system[4]
Plasma sources—dual plasma sources[4]
Gas inlets—dual gas inlets[4]
Fixed RF matching—yes[4]
Dual plasma sources—yes[4]
Dual gas inlets—yes[4]
Side wall roughness (scallop depth)—<6 nm for nanoscale features; range 6–700 nm[4]
Wafer handling—6-inch or smaller samples[4]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]saulcontrol.comsaulcontrol.com
  3. [3]getspares.comgetspares.com
  4. [4]cns1.rc.fas.harvard.educns1.rc.fas.harvard.edu
  5. [5]waferpedia.comwaferpedia.com