Comparison ledger
Applied Materials Centura 5200 MXP+, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura 5200 MXP+Applied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura 5200 | Tegal 110 |
| Cited variants |
|
|
| Specifications | ||
| Configuration | Components:[3] | — |
| ESC Type | Polymide[3] | — |
| Endpoint | Monochromator[4] | — |
| Gases Used | NF3, CH3F, CL2, HBr, CHF3, Ar, CF4, O2, N2, C4F8, CO[3] | — |
| Mass Flow Controllers (MFCs) | 32 Digital MFCs (14-Unit or 18-Horiba)[3] | — |
| Software Version | 4.9_15[5] | — |
| Dry Pumps | IQDP80 (x4) / IQDP80/WSU151 (x2)[4] | — |
| Chillers | Neslab 150 units (x5)[3] | — |
| Mainframe | SHO[6] | — |
| Gas Panel Type | Standard[6] | — |
| Voltage | 208 VAC, 3 Phase, 240 A, 50/60 Hz[6] | — |
| System Controller | Standard[6] | — |
| Fab Installation | TTW[6] | — |
| System Umbilicals | 50 ft - standard[6] | — |
| Heat Exchanger Type 1 | AMAT 0[6] | — |
| Heat Exchanger Type 2 | Neslab[6] | — |
| Loadlock pump | Ebara[6] | — |
| Pump Size | A 10[6] | — |
| I/O Slit Valve Type | Viton[6] | — |
| HF RF Gen Type | ENI OEM 12B-3[6] | — |
| Etch RF Match Type | Phase 4[7] | — |
| FAB Monitor | TTW[6] | — |
| Liquid Delivery | None[6] | — |
| LF RF Gen Type | None[6] | — |
| Chamber A | MXP[6] | — |
| Slit Valve Type | Anodized[6] | — |
| Chamber A Process | Oxide[6] | — |
| Process Kit Type | Oxide Etch ESC[6] | — |
| Manufacturer | Applied Materials[3] | — |
| Model | Centura 5200 MXP+[3] | — |
| Category | Etch[7] | — |
| Wafer size | 200 mm[4] | — |
| Configured for | 200 mm[4] | — |
| HF RF generator type | ENI OEM 12B-3[7] | — |
| LF RF generator type | None[7] | — |
| Vacuum pumps | IQDP80 (x4) / IQDP80/WSU151 (x2)[3] | — |
| Robot | HP Robot[5] | — |
| Gas delivery | 32 Digital MFCs (14-Unit or 18-Horiba)[7] | — |
| Control software | 4.9_15[4] | — |
| Configured wafer size | 200 mm[5] | — |
| Gas set | NF3, CH3F, CL2, HBr, CHF3, Ar, CF4, O2, N2, C4F8, CO[3] | — |
| Mass flow controllers | 32 Digital MFCs 14-Unit or 18-Horiba[4] | — |
| Dry pumps | 4-IQDP80, 2-IQDP80/WSU151[4] | — |
| Components | Orienter (x1), MxP Poly (x1), MxP+ Poly (x2), eMxP+ (x1)[3] | — |
| model | — | 110 SE[2] |
| application focus | — | process development applications[2] |
| process capability | — | deep silicon plasma etching[2] |
| capabilities | — | very high aspect ratio trench etch and profile control[2] |
| configuration | — | multiple configurations with minimum technical intervention[2] |
| System type | — | plasma etch system[8] |
| Supported components | — | MEMS and 3D-IC components[2] |
| Control capability | — | very high aspect ratio trench etch and profile control[8] |
| Physical description | — | compact[2] |
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