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Centura AP AdvantEdge G 5 Dryversus110

Applied Materials Centura AP AdvantEdge G 5 Dry, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
110Tegal
OEMApplied MaterialsTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials CenturaTegal 110
Cited variants—
Specifications
Phase3 Phase[2]—
Configuration3 Wire + G Line[2]—
Chamber A Chemicals Gases UsedBCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[2]—
Chamber B Chemicals Gases UsedBCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[2]—
Chamber D Chemicals Gases UsedN2, O2, CF4[2]—
OEMApplied Materials[2]—
ModelCentura AP AdvantEdge G 5[2]—
Equipment typeDry Etcher[2]—
Electrical3 Phase - 3 Wire[2]—
LineG Line[2]—
Frequency50/60 Hz[2]—
LoadportStandard Loadport[2]—
Control systemServer GEM II[2]—
Chamber A gasesBCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[2]—
Chamber B gasesBCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[2]—
Chamber D gasesN2, O2, CF4[2]—
HDDNo HDD[2]—
Vintage2013[2]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[3]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[3]
Physical description—compact[1]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com