Comparison ledger
Applied Materials Centura DPS 2 Poly Dry, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura DPS 2 Poly DryApplied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura DPS | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 300mm DPS Metal chamber with 200mm ESC[2] | — |
| Mainframe | 300mm[3] | — |
| Gas | O2, CHF3, Ar, CF4, O2/He, He, N2, HBr, CL2, NF3[3] | — |
| OS | Windows NT[3] | — |
| Missing | 23.11.08 1 LL off line[3] | — |
| Manufacturer | Applied Materials[3] | — |
| Model | Centura DPS 2[3] | — |
| Tool type | Poly Dry Etcher[3] | — |
| Back end process | metal etch[3] | — |
| Control system OS | Windows NT[3] | — |
| Missing note | 23.11.08 1 LL off line[3] | — |
| Vintage | 2001[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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