Comparison ledger
Applied Materials P 5000 MxP+, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | P 5000 MxP+Applied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials P 5000 MxP+ | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Voltage | 208 V, 125.0 A, 50/60 Hz, 3 Phase[2] | — |
| Largest Load Ampere Rating | 125 Amps[2] | — |
| MAximum Ampere Rating | 90 KVA[2] | — |
| Full Load Current | 250 Amps[2] | — |
| Interrupt Current | 10,000 Amps I.C.[2] | — |
| Wafer Set Size | 8"[2] | — |
| Chamber A | MxP+ Etch[2] | — |
| Chamber B | MxP+ Etch[2] | — |
| Chamber C | MxP+ Etch[2] | — |
| Configuration | Chamber A:[2] | — |
| RF Generator | OEM 12 B[2] | — |
| Baraton | 1 Torr[2] | — |
| Slit Valve | Standard[2] | — |
| Baratron | 1 Torr[2] | — |
| Make | Applied Materials[2] | — |
| Model | P 5000 MxP+[2] | — |
| Category | Etcher[2] | — |
| Wafer sizes | 8, 6 inch[2] | — |
| Wafer set size | 6"[3] | — |
| Chamber A RF generator | OEM 12 B[2] | — |
| Chamber B RF generator | OEM 12 B[2] | — |
| Chamber C RF generator | 12 B[2] | — |
| Electrical requirement | Line voltage 200/208 V[2] | — |
| Mainframe type | Standard[2] | — |
| Robot type | MK II[2] | — |
| Load lock cassette | Manual 2 Cassette[2] | — |
| Storage elevator | 15 slots[2] | — |
| Power rack | Shrink[2] | — |
| Line Frequency | 50/60 Hz[2] | — |
| Line Voltage | 200/208 V[2] | — |
| Line Amperage | 123 Amps[2] | — |
| 3rd Monitor | Penulator[2] | — |
| OEM | Applied Materials[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[1] |
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