Comparison ledger
CEE 100, Nikon NSR S 307 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100CEE | NSR S 307 ENikon |
|---|---|---|
| OEM | CEE | Nikon |
| Category | Lithography | Lithography |
| Wafer size | 6" | Wafer X-Axis is out of order |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 100 | Nikon NSR |
| Cited variants |
| — |
| Specifications | ||
| Tool type | Spray Developer[1] | — |
| Accepts wafer size | up to 6" wafers[2] | — |
| Programmable programs | 10 programs[2] | — |
| Steps per program | up to 10 steps[2] | — |
| Programmable step parameters | Acceleration, Speed, Time[2] | — |
| Associated document | CEE Model 100CB Spinner.doc[2] | — |
| Wafer size | Up to 6 inches[2] | Wafer X-Axis is out of order[4] |
| Programs | 10 programs each with up to 10 steps[2] | — |
| Control parameters | Acceleration, Speed, Time[2] | — |
| Equipment type | Spin coater[3] | — |
| Programming | 10 programs; up to 10 steps per program[2] | — |
| Step parameters | Acceleration, speed, time[2] | — |
| Wafer | — | 300 mm[4] |
| Exposure Light Source | — | ArF excimer laser[4] |
| Wavelength | — | 193[4] |
| Resolution | — | 80 nm[5] |
| Alignment Accuracy | — | 12 nm[4] |
| Exposure Field | — | 26 x 33 mm[4] |
| Reduction Ratio | — | 1:4[4] |
| Configuration | — | Hard Disk, 300mm[6] |
| Light Source | — | ArF excimer laser[4] |
| Lens NA | — | 0.85[5] |
| Lens Data | — | Cymer XLA 140[6] |
| Wafer Size Support | — | 200 mm / 300 mm[5] |
| Throughput (300 mm) | — | > 112 WPH[5] |
| Throughput (200 mm) | — | > 160 WPH[5] |
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