Comparison ledger
CEE 200 Bake Plate, CEE 200 Spin, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 SpinCEE | |
|---|---|---|
| OEM | CEE | CEE |
| Category | Thermal / Diffusion | Resist Processing |
| Wafer size | 200mm | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 200 | CEE 200 |
| Specifications | ||
| Wafer size | up to 200mm wafer[1] | — |
| Software | Internal OS[1] | — |
| Voltage | 208V[1] | — |
| Wafer Size | up to 200 mm[2] | — |
| Maximum Temperature | 300 °C[2] | — |
| Bake Methods | Hard contact, Proximity (lift 25-100 μm using N2)[2] | — |
| Exhaust Cover | Yes (removal of fume)[2] | — |
| Smart Pins for Temperature Control | Yes[2] | — |
| Power | 208V[1] | — |
| Bake methods | hard contact, proximity[2] | — |
| Phase | — | 1 Phase[3] |
| Type | — | Spin Coater[3] |
| Model | — | 200[3] |
| Make | — | CEE[3] |
| Wafer Sizes | — | 8 inch[3] |
| Configuration | — | 1 Phase[3] |
| Equipment type | — | Spin Coater[3] |
| Spin speed | — | 5000 rpm[4] |
| Substrate support | — | Flat substrates up to 200 mm or fragments[4] |
| Substrate thickness max | — | 12 mm[4] |
| Coating thickness | — | Uniform coating thickness up to 100 µm[4] |
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