Waferpedia

Comparison ledger

200 SpinversusSK 80 BW-AVPE

CEE 200 Spin, SCREEN SK 80 BW-AVPE, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
OEMCEESCREEN
CategoryResist ProcessingResist Processing
Wafer size—Wafer Transfer Robot x 1 (1 Block System)
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 200SCREEN SK 80
Specifications
Phase1 Phase[1]—
TypeSpin Coater[1]—
Model200[1]SK 80 BW-AVPE[3]
MakeCEE[1]—
Wafer Sizes8 inch[1]—
Configuration1 Phase[1]4 Cassette Loading Port[3]
Equipment typeSpin Coater[1]Coater / Developer[3]
Spin speed5000 rpm[2]—
Substrate supportFlat substrates up to 200 mm or fragments[2]—
Substrate thickness max12 mm[2]—
Coating thicknessUniform coating thickness up to 100 µm[2]—
Process—Photo[3]
Cassette Index Station—4 Side Loading[3]
Wafer size—Wafer Transfer Robot x 1 (1 Block System)[3]
PR Resist Pump—Iwaki Bellows Pump 4 Set Per 1 Spin Unit[3]
Wafer Flow Direction—Right to Left[3]
Voltage—100V, 3.5 kW[4]
Main Body—CCD, ETU, TCU, Power Unit (USA)[4]
OEM—SCREEN / DNS[3]
Cassette loading port—4 cassette loading port[3]
Layout—2 coater & 2 developer layout[3]
Wafer transfer—Wafer Transfer Robot x 1 (1 Block System)[3]
Main body components—CCD, ETU, TCU, Power (USA)[3]
Power—100V, 3.5 kW; 208V, 9.4 kW; 208V, 8.4 kW[4]
Vintage—1995[3]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]amolf.nlamolf.nl
  3. [3]inventory listing
  4. [4]inventory listing