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Comparison ledger

200 SpinversusAct 12 DUV Photoresist Coater Developer Track

CEE 200 Spin, Tokyo Electron Act 12 DUV Photoresist Coater Developer Track, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
OEMCEETokyo Electron
CategoryResist ProcessingResist Processing
Wafer size—The direction of wafer flow is right to left
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 200Tokyo Electron Act 12
Specifications
Phase1 Phase[1]—
TypeSpin Coater[1]—
Model200[1]Act 12 DUV Photoresist Coater / Developer Track[3]
MakeCEE[1]—
Wafer Sizes8 inch[1]—
Configuration1 Phase[1]Type 4 Main controller[3]
Equipment typeSpin Coater[1]—
Spin speed5000 rpm[2]—
Substrate supportFlat substrates up to 200 mm or fragments[2]—
Substrate thickness max12 mm[2]—
Coating thicknessUniform coating thickness up to 100 µm[2]—
Wafer size—The direction of wafer flow is right to left[3]
OEM—Tokyo Electron[3]
Category—Resist Processing[3]
Wafer flow direction—right to left[3]
Main controller—Type 4[3]
Load ports—4 FOUP load ports for 12 inch wafers[3]
COT units—2[3]
BARC units—2[3]
DEV units—4[3]
WEE unit—1[3]
ADH units—2[3]
Closed loop T&H system—Included[3]
IFB—for wafer transport system NIKON NSR-S204B[3]
Vintage—2009[3]
Manufacturer—TEL Tokyo Electron[4]
Description—Photoresist Coater and Developer Track[4]
Technology—Deep Ultraviolet (DUV)[3]
Wafer setup—300mm – 12inch wafer setup[3]
Process units—2 COT units, 2 BARC units, 4 DEV units, 1 WEE unit, 2 ADH units[3]
Transport interface—IFB for wafer transport system NIKON NSR-S204B[3]
Chemical cabinets—Chemical Cabinet 1, Chemical Cabinet 2, Chemical Cabinet 3[3]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]amolf.nlamolf.nl
  3. [3]inventory listing
  4. [4]linkedin.comlinkedin.com