Comparison ledger
Hitachi M 712 M 711 Dry Etch Process, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | M 712 M 711 Dry Etch ProcessHitachi | 110Tegal |
|---|---|---|
| OEM | Hitachi | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Hitachi M 712 M 711 Dry Etch Process | Tegal 110 |
| Cited variants |
|
|
| Specifications | ||
| Software revision | 1.07 PMv.02.16M[3] | — |
| Configuration | Gaspanel included[3] | — |
| ESC Type | Bipolar[1] | — |
| Endpoint type | Hitachi EPD monitor ePMv02.16M[1] | — |
| Wafer size | 12 inch[3] | — |
| TMP | SHIMAZU EC TMP[1] | — |
| TMP controller | 3203LMC-K1 EC TMP Controller[1] | — |
| Source generator | DAIHEN ES7-IIA EC Source generator[1] | — |
| Bias generator | PEARL CF-500-400K EC Bias generator[1] | — |
| Gas configuration | Line / EC1 / Strip - 1 / Ar - 2 / C12 - 3 / SF6 - 4 / HBr - 5 / CF3 - 6 / CH4 - 7 / NF3 - 8 / O2 - 9 / N2 - 10/ SF6 - 11/ C12 - 12/ O2[1] | — |
| Gas panel included | Yes[3] | — |
| Vintage | 2006[3] | — |
| Type | Dry Etch Process Chamber[3] | — |
| Gas panel | Included[3] | — |
| EC TMP | SHIMAZU EC TMP - 3203LMC-K1 EC TMP Controller[1] | — |
| EC source generator | DAIHEN ES7-IIA[1] | — |
| EC bias generator | PEARL CF-500-400K[1] | — |
| model | — | 110 SE[2] |
| application focus | — | process development applications[2] |
| process capability | — | deep silicon plasma etching[2] |
| capabilities | — | very high aspect ratio trench etch and profile control[2] |
| configuration | — | multiple configurations with minimum technical intervention[2] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[2] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[2] |
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