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Hitachi

M 712 M 711 Dry Etch Process

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The Hitachi M 712 / M 711 Dry Etch Process is an etch system for 12-inch wafers. The Hitachi M 712 / M 711 Dry Etch Process can be configured with a bipolar ESC and a Hitachi EPD monitor for endpoint detection. The Hitachi M 712 / M 711 Dry Etch Process includes a gas panel and supports a range of process gases.[1][2]

Hitachi logo
Fig. — Manufacturer logo, not a photo of this toolWikimedia Commons (see file page for license)

Power

DAIHEN ES7-IIA EC Source generator[2]

Gas delivery

Gas configuration:[2]

What it is

The Hitachi M 712 / M 711 Dry Etch Process is a dry etch process chamber used in semiconductor manufacturing.[1][2]

How it works

The Hitachi M 712 / M 711 Dry Etch Process uses an electrostatic chuck with a bipolar type, an endpoint monitor, an EC source generator, an EC bias generator, and an EC TMP controller.[2]

Where it fits in the process flow

General reference — not yet source-verified

Dry etch equipment sits in the pattern-transfer portion of the fab flow, where it works after lithographic patterning and before later device finishing steps.

The Hitachi M 712 / M 711 Dry Etch Process belongs in a wafer-etch process module rather than in deposition, metrology, or inspection.

Applications

General reference — not yet source-verified

Dry etch chambers are used for plasma-based pattern transfer on semiconductor wafers.

What do the numbers mean?

Power & electrical6

DAIHEN ES7-IIA EC Source generator[2]
Accurate?
PEARL CF-500-400K EC Bias generator[2]
Accurate?
Source generator
DAIHEN ES7-IIA EC Source generator[2]
Accurate?
Bias generator
PEARL CF-500-400K EC Bias generator[2]
Accurate?
EC source generator
DAIHEN ES7-IIA[2]
Accurate?
EC bias generator
PEARL CF-500-400K[2]
Accurate?

Wafer handling1

Wafer size
12 inch[1]
Accurate?

Gas & chemistry4

Gas configuration:[2]
Accurate?
Gas configuration
Line / EC1 / Strip - 1 / Ar - 2 / C12 - 3 / SF6 - 4 / HBr - 5 / CF3 - 6 / CH4 - 7 / NF3 - 8 / O2 - 9 / N2 - 10/ SF6 - 11/ C12 - 12/ O2[2]
Accurate?
Gas panel included
Yes[1]
Accurate?
Gas panel
Included[1]
Accurate?

Control & software4

Software revision
1.07 PMv.02.16M[1]
Accurate?
3203LMC-K1 EC TMP Controller[2]
Accurate?
TMP controller
3203LMC-K1 EC TMP Controller[2]
Accurate?
EC TMP
SHIMAZU EC TMP - 3203LMC-K1 EC TMP Controller[2]
Accurate?

Configuration & options19

Gaspanel included[1]
Accurate?
ESC Type
Bipolar[2]
Accurate?
Endpoint type
Hitachi EPD monitor ePMv02.16M[2]
Accurate?
SHIMAZU EC TMP[2]
Accurate?
Line / EC1 / Strip[2]
Accurate?
1 / Ar[2]
Accurate?
2 / C12[2]
Accurate?
3 / SF6[2]
Accurate?
4 / HBr[2]
Accurate?
5 / CF3[2]
Accurate?
6 / CH4[2]
Accurate?
7 / NF3[2]
Accurate?
8 / O2[2]
Accurate?
9 / N2[2]
Accurate?
10/ SF6[2]
Accurate?
11/ C12[2]
Accurate?
TMP
SHIMAZU EC TMP[2]
Accurate?
Vintage
2006[1]
Accurate?
Type
Dry Etch Process Chamber[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
M 712 / M 711—2006–2006Variant with gas configuration and ESC type BipolarEquipment inventory listing[2]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • ConfigurationDAIHEN ES7-IIA EC Source generator[2]
  • ConfigurationPEARL CF-500-400K EC Bias generator[2]
  • ConfigurationGas configuration:[2]
  • Source generatorDAIHEN ES7-IIA EC Source generator[2]
  • Bias generatorPEARL CF-500-400K EC Bias generator[2]
  • Gas configurationLine / EC1 / Strip - 1 / Ar - 2 / C12 - 3 / SF6 - 4 / HBr - 5 / CF3 - 6 / CH4 - 7 / NF3 - 8 / O2 - 9 / N2 - 10/ SF6 - 11/ C12 - 12/ O2[2]
  • Gas panel includedYes[1]
  • Gas panelIncluded[1]
  • EC source generatorDAIHEN ES7-IIA[2]
  • EC bias generatorPEARL CF-500-400K[2]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What materials can a dry etch system of this class process?General reference — not yet source-verified

Such systems can etch a range of materials used in semiconductor fabrication, including silicon, silicon dioxide, silicon nitride, metals, and other thin films, depending on the process chemistry and chamber configuration.

What is the difference between dry etching and wet etching?General reference — not yet source-verified

Wet etching uses liquid chemicals and is typically isotropic, while dry etching uses plasma and can produce highly directional, anisotropic profiles. Dry etching offers better pattern transfer fidelity for fine geometries and is preferred for critical layers in integrated circuit manufacturing.

Not publicly documented

The following facts about the M 712 M 711 Dry Etch Process are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the M 712 M 711 Dry Etch Process are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the M 712 M 711 Dry Etch Process are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the M 712 M 711 Dry Etch Process are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the M 712 M 711 Dry Etch Process is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the M 712 M 711 Dry Etch Process are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
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Last updated Oct 13, 2026.

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